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MPCVD (microwave plasma chemical vapor deposition) synthesis equipment and control method

A technology of synthesis equipment and control center, applied in chemical instruments and methods, control/regulatory processes, chemical/physical/physical-chemical processes, etc., can solve problems such as affecting product quality, unfavorable plasma, and fragility

Active Publication Date: 2018-12-28
CHANGSHA ADVANCED MATERIALS IND RES INST CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to improve the deposition rate, quality and appropriately large deposition area of ​​the diamond film, many developed countries are currently developing high-power MPCVD technology and have developed a variety of high-power MPCVD equipment, but the magnetic field in the microwave generator in the high-power MPCVD equipment The control components are very fragile, and the magnetron may be damaged due to excessively high reflected microwave power during the diamond synthesis process, especially during the microwave power up and down process before and after the reaction
At the same time, too high reflected microwave power is very unfavorable for the preparation of stable plasma, which affects the quality of products

Method used

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  • MPCVD (microwave plasma chemical vapor deposition) synthesis equipment and control method
  • MPCVD (microwave plasma chemical vapor deposition) synthesis equipment and control method
  • MPCVD (microwave plasma chemical vapor deposition) synthesis equipment and control method

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Embodiment Construction

[0074] The present invention will be described in detail below with reference to the accompanying drawings and examples. It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. For the convenience of description, if the words "up", "down", "left" and "right" appear in the following, it only means that the directions of up, down, left and right are consistent with the drawings themselves, and do not limit the structure.

[0075] Such as figure 2 Shown, a kind of MPCVD synthesis equipment, comprises 1, control center; 3, microwave power supply; 4, microwave generator; 5; microwave transmission guiding device; 6, reflected microwave adjusting device (middle section); 1. Reflected microwave adjusting device (end section); 9. Reflected microwave measuring and absorbing device; 10. Reaction chamber; 11. Temperature measuring device; 12. Vacuum degree measuring device; 13. Vac...

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Abstract

The invention relates to MPCVD (microwave plasma chemical vapor deposition) synthesis equipment. The MPCVD synthesis equipment is characterized by comprising a microwave power supply, a microwave generation device, a microwave transmission guide device, a reflecting microwave measurement and absorption device, a reflecting microwave adjustment device, a mode transducer, a reaction cavity, a gas supply device for supplying reaction gas to the reaction cavity, a temperature measurement device for measuring surface temperature of a target product in the reaction cavity, a vacuum measurement device for measuring air pressure in the reaction cavity, an air pressure control device for adjusting air pressure in the reaction cavity and a control center, wherein the microwave power supply, the reflecting microwave adjustment device, the reflecting microwave measurement and absorption device, the temperature measurement device, the vacuum measurement device and the air pressure control device are in communication connection with the control center, and the control center receives and recognizes data signals fed back from each device and sends corresponding instructions to the devices after analyzing and processing the data signals.

Description

technical field [0001] The invention relates to microwave plasma chemical vapor deposition (MPCVD) synthesis equipment and a control method, belonging to the field of chemical vapor deposition equipment. Background technique [0002] The MPCVD method can not only be used to synthesize diamond, but is also applicable to the preparation of many other materials. The quality of MPCVD synthesized diamond is related to many factors, including carbon source concentration, gas flow rate, substrate stage height, microwave power, synthesis temperature, etc. The synthesis temperature has a great relationship with the quality of the synthetic diamond, so the automatic monitoring and control of the diamond temperature during the synthesis process is very critical. In the prior art, manual adjustment is generally used to adjust various factors and control the synthesis reaction to proceed stably. However, manual adjustment may cause misoperation, and at the same time, the operation may no...

Claims

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Application Information

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IPC IPC(8): B01J19/12B01J19/00
CPCB01J19/0033B01J19/126
Inventor 黄翀唐跃强
Owner CHANGSHA ADVANCED MATERIALS IND RES INST CO LTD
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