Device and method for testing electrical parameters of silicon-germanium/silicon multi-quantum well infrared sensitive material
A technology of multiple quantum wells and sensitive materials, which is applied in the field of electrical parameter testing devices of silicon germanium silicon multiple quantum wells infrared sensitive materials, can solve the problems that the four-probe method cannot be used to test the electrical properties of quantum well materials, etc., so as to improve the testing efficiency , The effect of simple structure and easy operation
Inactive Publication Date: 2019-01-01
NANJING UNIV OF SCI & TECH
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Problems solved by technology
Therefore, the traditional four-probe method cannot be used to test the electrical properties of quantum well materials
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[0117] Step 1, performing MEMS process on a silicon-germanium-silicon multi-quantum well infrared sensitive material to obtain a material to be tested containing a test electrode;
[0118] combine Figure 4 The silicon germanium silicon multi-quantum well infrared sensitive material structure includes bottom contact layer, bottom isolation layer, silicon germanium / silicon multi quantum well structure and top contact layer in sequence from bottom to top. The silicon germanium / silicon multiple quantum well structure is composed of undoped single crystal silicon germanium layer and undoped single crystal silicon layer. The single crystal silicon germanium layer is adjacent to the top isolation layer and the bottom isolation layer respectively. The thickness of the crystalline silicon germanium layer (well) is 10nm, the mass content of germanium is 30%, the thickness of the single crystal silicon layer (barrier) is 30nm, and the number of silicon germanium / silicon cycles is 4 laye...
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The invention discloses a device and method for testing the electrical parameters of a silicon-germanium / silicon multi-quantum well infrared sensitive material. The device and the method of the invention are mainly applied to the measurement of the electrical parameters of a critical component, i.e., the silicon-germanium / silicon multi-quantum well infrared sensitive material, used in thermoelectric conversion of a micro-bolometer. The device mainly comprises an electrical parameter measurement module and a data transmission module. The to-be-measured silicon-germanium / silicon multi-quantum well infrared sensitive material is subjected to MEMS processing to manufacture a longitudinal conductive channel at first, and the temperature coefficient of resistance and the I-V curve of the to-be-measured material are obtained by using the device provided by the invention and a four-probe testing method. The device and the method solve the problem that the traditional four-probe method cannot test the electrical performance of quantum well materials; and since a wireless radio frequency module is used for transmitting data, the flexibility and portability of the device are improved, and thedevice has significance in engineering application.
Description
technical field [0001] The invention belongs to the field of optoelectronic technology and test and measurement technology, in particular to a device and method for testing electrical parameters of silicon-germanium-silicon multi-quantum well infrared sensitive materials. Background technique [0002] Silicon-germanium-silicon multi-quantum well infrared sensitive material is the key component of microbolometer thermoelectric conversion, and the electrical parameters such as microbolometer temperature coefficient of resistance (TCR), current-voltage characteristic curve (I-V), and unit resistance are determined by the characteristics of the sensitive material Decide. Therefore, the test of sensitive materials is not only of reference value for the design of the readout circuit, but also has a guiding role for the structural design of the microbolometer. [0003] The high-performance silicon germanium / silicon (Si1-xGex / Si) multiple quantum well material was prepared as the s...
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Login to View More IPC IPC(8): G01N27/04
CPCG01N27/041
Inventor 周同曹豫王雅刚苏岩
Owner NANJING UNIV OF SCI & TECH