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Gradually doped wide waveguide interband cascaded laser and its preparation method

A gradient doping, laser technology, applied in semiconductor lasers, lasers, laser parts and other directions, can solve the problems of unfavorable laser performance, low optical confinement factor, low average refractive index, etc., to improve photoelectric efficiency and improve optical confinement factor. , the effect of increasing the optical gain

Active Publication Date: 2021-12-14
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, since the cascading region of existing interband cascaded lasers is composed of multiple layers and materials, its average refractive index is low, resulting in insufficient optical confinement at the center of the laser, and a low optical confinement factor. Conducive to the improvement of laser performance

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  • Gradually doped wide waveguide interband cascaded laser and its preparation method
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  • Gradually doped wide waveguide interband cascaded laser and its preparation method

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Embodiment Construction

[0036] This disclosure proposes a gradedly doped wide waveguide interband cascade laser and its preparation method. By introducing separate confinement layers with micron-scale thickness on both sides of the cascade region, and using graded doping for the respective confinement layers, the confinement layers at both ends The doping concentration is relatively high, and the doping concentration in the central region is relatively low, which can effectively reduce the voltage drop of the heterojunction surface, improve the photoelectric efficiency, reduce the series resistance, reduce the absorption of free carriers, and reduce the Loss, and the energy band mutation caused by the introduction of separate confinement layers is further smoothed, so as to achieve the effect of reducing the working voltage and improving the working efficiency.

[0037] In order to make the purpose, technical solutions and advantages of the present disclosure clearer, the present disclosure will be fu...

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Abstract

The invention discloses a gradually doped wide waveguide interband cascade laser and a preparation method thereof, wherein the gradually doped wide waveguide interband cascade laser comprises: a substrate; Layer, lower respectively confinement layer, cascade region, upper respectively confinement layer, upper waveguide cladding, and upper contact layer; wherein, the thickness of the lower respectively upper confinement layer is on the order of hundreds of nanometers to microns, and the lower respectively Both the confinement layer and the upper confinement layer are gradually doped, so that the doping concentration at both ends of the lower confinement layer and the upper confinement layer is relatively high, and the doping concentration in the central region is relatively low. The graded doped wide waveguide interband cascade laser effectively improves the optical confinement factor and increases the optical gain; effectively reduces the voltage drop on the heterojunction surface, improves the photoelectric efficiency, reduces free carrier absorption, and reduces the loss of the device ; And can reduce the operating voltage, improve work efficiency.

Description

technical field [0001] The disclosure belongs to the field of mid-infrared semiconductor lasers, and relates to a gradually doped wide waveguide interband cascaded laser and a preparation method thereof. Background technique [0002] In the infrared band, the 2μm-5μm band is a very important atmospheric window. The absorption peaks of many atoms and molecular gases are within this band, including water molecules, methane, hydrogen chloride and other gases. The absorption peak of water molecules is 2.7 μm, the absorption peak of methane is 3.41 μm, and the absorption peak of hydrogen chloride gas is 3.54 μm, especially some toxic and harmful gases, such as CO, CH 4 , NO 2 etc., the absorption peak in this band is strong, so this band is suitable for environmental monitoring. [0003] Absorption spectroscopy (TDLAS) and photoacoustic spectroscopy (PAS) based on mid-infrared lasers have broad application prospects in the fields of industrial gas online analysis, environmental...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/343
CPCH01S5/34313
Inventor 张一牛智川张宇徐应强杨成奥谢圣文邵福会尚金铭
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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