SiC crystal whisker enhanced Sn-Bi series solder and preparation method thereof

A sn-bi and whisker technology, applied in the field of Sn-Bi solder, can solve problems such as poor compatibility, easy agglomeration, shortened solder service life, etc., achieve small soldering pores, improve mechanical properties, and excellent thermal fatigue performance Effect

Inactive Publication Date: 2019-01-11
EUNOW ELECTRONICS TECH CO LTD SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current composite solder reinforcement particles have poor compatibility with the alloy matrix and are prone to agglomeration, which greatly shortens the service life of the solder

Method used

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  • SiC crystal whisker enhanced Sn-Bi series solder and preparation method thereof
  • SiC crystal whisker enhanced Sn-Bi series solder and preparation method thereof
  • SiC crystal whisker enhanced Sn-Bi series solder and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] SiC whisker-enhanced Sn-Bi solder, in parts by weight, includes the following components:

[0028] SiC whiskers 3 parts;

[0029] 40 parts of Sn-Bi microalloy powder;

[0030] Wherein, the Sn-Bi series microalloy powder comprises the following components in mass percent:

[0031]

[0032] The rest is Sn and unavoidable impurities;

[0033] Its preparation method comprises the following steps:

[0034] (1) The surface of the SiC whisker is activated by plasma; then a layer of myopic nickel is deposited on the surface to obtain a nickel-plated SiC whisker; wherein, the conditions of the plasma treatment are that the microwave power is 600W and the temperature is 400°C. The plasma treatment time is 5min;

[0035] (2) Mix and grind the nickel-plated SiC whiskers prepared above with Sn-Bi microalloy powder to prepare composite solder.

Embodiment 2

[0037] SiC whisker-enhanced Sn-Bi solder, in parts by weight, includes the following components:

[0038] SiC whiskers 6 parts;

[0039] 80 parts of Sn-Bi microalloy powder;

[0040] Wherein, the Sn-Bi series microalloy powder comprises the following components in mass percent:

[0041]

[0042] The rest is Sn and unavoidable impurities;

[0043] Its preparation method comprises the following steps:

[0044] (1) The surface of the SiC whisker is activated by plasma; then a layer of myopic nickel is deposited on the surface to obtain a nickel-plated SiC whisker; wherein, the conditions of the plasma treatment are that the microwave power is 600W and the temperature is 500°C. The plasma treatment time is 10min;

[0045] (2) Mix and grind the nickel-plated SiC whiskers prepared above with Sn-Bi microalloy powder to prepare composite solder.

Embodiment 3

[0047] SiC whisker-enhanced Sn-Bi solder, in parts by weight, includes the following components:

[0048] SiC whiskers 4 parts;

[0049] 50 parts of Sn-Bi microalloy powder;

[0050] Wherein, the Sn-Bi series microalloy powder comprises the following components in mass percent:

[0051]

[0052] The rest is Sn and unavoidable impurities;

[0053] Its preparation method comprises the following steps:

[0054] (1) The surface of the SiC whisker is activated by plasma; then a layer of myopic nickel is deposited on the surface to obtain a nickel-plated SiC whisker; wherein, the conditions of the plasma treatment are that the microwave power is 700W and the temperature is 400°C. The plasma treatment time is 6min;

[0055] (2) Mix and grind the nickel-plated SiC whiskers prepared above with Sn-Bi microalloy powder to prepare composite solder.

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Abstract

The invention discloses SiC crystal whisker enhanced Sn-Bi series solder which comprises the following components in part by weight: 3-6 parts of SiC crystal whisker and 40-80 parts of Sn-Bi series microalloy powder, wherein the Sn-Bi series microalloy powder comprises the following components in percentage by mass: 35.9-57.5% of Bi, 0.3-0.6% of In, 0.01-0.05% of Cu, 0.005-0.009% of Zn, 0.001-0.003% of Pt, 0-0.003% of Y, 0.001-0.005% of Ce, 0.0005-0.0009% of Cd, 0.0001-0.0005% of Co and the balance of Sn and unavoidable impurities. The invention further discloses a preparation method of the SiC crystal whisker enhanced Sn-Bi series solder. The SiC crystal whisker enhanced Sn-Bi series solder prepared through the preparation method disclosed by the invention has high wettability to a matrixand has high mechanical performance.

Description

Technical field: [0001] The invention relates to the field of brazing, in particular to a SiC whisker-reinforced Sn-Bi solder. Background technique: [0002] The solder obtained by adding a strengthening phase to the existing solder is called composite solder. Composite solder improves the reliability of the solder by maintaining a stable microstructure and uniform deformation inside the solder, and improves and compensates for the performance of the base alloy. Some deficiencies, comprehensively improve the performance of solder joints (especially thermal fatigue performance and creep performance) and service life. Another important feature of this strengthening is that it will not change the melting point, wettability and other process characteristics of the original solder matrix. [0003] There are generally two methods for preparing composite solder. The most traditional method is to add strengthening particles to molten solder for melting. This method is called mechan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K35/26B23K35/40
CPCB23K35/262B23K35/40
Inventor 陈钦罗登俊徐衡陈旭
Owner EUNOW ELECTRONICS TECH CO LTD SUZHOU
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