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Graphene reduces heat dissipation structure and preparation method of Gan-based hemt thermal resistance

A heat dissipation structure, graphene technology, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., can solve problems affecting device reliability, peak thermal resistance, etc., to reduce interface thermal resistance, reduce Peak thermal resistance, the effect of improving heat conduction

Active Publication Date: 2020-09-29
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

High thermal resistance is the leading factor that leads to high peak thermal resistance of the device and affects the reliability of the device

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  • Graphene reduces heat dissipation structure and preparation method of Gan-based hemt thermal resistance
  • Graphene reduces heat dissipation structure and preparation method of Gan-based hemt thermal resistance
  • Graphene reduces heat dissipation structure and preparation method of Gan-based hemt thermal resistance

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Embodiment Construction

[0043] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments and accompanying drawings.

[0044] For GaN-based devices, due to the heterogeneous growth of SiC and GaN materials, the interface thermal resistance between the SiC substrate and the GaN nucleation layer accounts for a relatively high proportion of the device thermal resistance. At the same time, when When the device works under high temperature and high pressure conditions, the self-heating effect of the channel causes the peak junction temperature of the channel to be too high. It can be seen that the interface thermal resistance between the silicon carbide substrate material and the gallium nitride material and the channel junction temperature of the device are too high It is the main factor leading to the high total thermal resistance of the device. In view of this, an em...

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Abstract

The invention discloses a heat dissipation structure of graphene for reducing the thermal resistance of GaN-based HEMT. The structure includes a substrate, a first graphene heat dissipation layer formed on the substrate, a gallium nitride nucleation layer formed on the first graphene heat dissipation layer, a gallium nitride buffer layer formed on the gallium nitride nucleation layer, a gallium nitride high electron mobility layer formed on the gallium nitride buffer layer, an aluminum gallium nitrogen barrier layer formed on the gallium nitride high electron mobility layer, and a passivationlayer, a source electrode, a drain electrode, and a gate electrode formed on the aluminum gallium nitrogen barrier layer from bottom up in sequence. The invention utilizes higher heat conductivity ofgraphene, the interfacial thermal resistance between the GaN nucleation layer and the substrate can be remarkably reduced, The strong bond structure of graphene material can also affect the heat conduction process near the interface of GaN nucleation layer and substrate, improve the heat dissipation of the device channel, reduce the peak thermal resistance of the device, increase the carrier of the channel, and improve the performance and long-term reliability of the device.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a heat dissipation structure and a preparation method for reducing the thermal resistance of a GaN-based HEMT by graphene. Background technique [0002] Gallium nitride material has good thermal properties, electrical properties and chemical stability. It has a large band gap, high breakdown electric field, high thermal conductivity, strong corrosion resistance and radiation resistance. It is ideal for high frequency, high temperature and high pressure , ideal material for high-power devices. The AlGaN / GaN heterojunction has extremely strong piezoelectric polarization and spontaneous polarization effects, and a high-concentration two-dimensional electron gas (2DEG) is formed at the heterojunction interface. Based on the AlGaN / GaN heterojunction Mass junction high electron mobility transistors (HEMTs) have broad application prospects in power and radio frequency devices. [0003] Howe...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/373H01L29/20H01L21/335H01L29/778
CPCH01L23/373H01L29/2003H01L29/66431H01L29/778
Inventor 赵妙刘洪刚张国斌吴宗刚孙兵常虎东
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI