A preparation method of an insulating SOI material

Abstract

The invention discloses a preparation method of an insulating SOI material, which comprises the following steps of: absorbing Cu impurities in bulk silicon and SOI material by a nano cavity caused byhydrogen ion implantation and helium ion implantation, respectively introducing the nano cavity formed by helium ion implantation into the SIMOXSOI material and the Smart Under the oxide buried layerof cut SOI material, there is little difference in the distribution of oxygen-rich buried layer after high temperature annealing. During annealing, the interaction of vacancy and hydrogen induced by hydrogen implantation will increase the diffusion rate of oxygen and form a wider oxygen-enriched region. After oxygen ion implantation, hydrogen ion implantation with high dose will be disadvantageousto the formation of continuous oxidized buried layer. The preparation method of the insulating SOI material has certain gettering effect on Cu due to the buried layer interface of the SIMOX material,but the gettering efficiency is low and the gettering is unstable at high temperature, while Smart The buried interface of cut SOI is more perfect than that of SIMOX SOI, and the gettering effect ofnano cavity layer is more obvious than that of SIMOX SOI. Two gettering sites, cavity layer and Al metal precipitation layer, were introduced into the same silicon substrate for the first time, and the gettering effects of two gettering methods on Cu impurity were compared.

Description

technical field [0001] The invention relates to the technical field of new insulating materials, in particular to a method for preparing insulating SOI materials. Background technique [0002] The existing silicon-on-insulator (SOI) technology has a wide range of applications in low-voltage, low-power circuits, high-temperature, radiation-resistant devices, and integrated optoelectronic devices due to its unique structure. It is known as "the silicon integrated circuit of the 21st century." technology". Contents of the invention [0003] The purpose of the present invention is to provide a method for preparing an insulating SOI material, so as to solve the problems of the existing silicon-on-insulating material raised in the background art above. [0004] In order to achieve the above object, the present invention provides the following technical scheme, a method for preparing an insulating SOI material, comprising the steps of absorbing Cu impurities in bulk silicon and ...

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Problems solved by technology

[0003] The purpose of the present invention is to provide a method for preparing an insulating SOI material, to solve the problems of the existing silicon-on-insulating material proposed in the above-mentioned background technology