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Oxidative volumetric expansion of metals and metal containing compounds

A technology of oxidant and nitriding agent, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve the problems of increasing the difficulty of isolating a device from another device, reducing gaps/spaces, etc.

Pending Publication Date: 2019-02-05
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the size of devices continues to shrink, so does the gap / space between devices, increasing the difficulty of physically isolating a device from another device
Filling high-quality dielectric materials in the high-aspect-ratio trenches / spaces / gaps (often irregularly shaped) between devices has been imple- mented by existing methods (including gapfill, hardmask and spacer applications) more and more challenging

Method used

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  • Oxidative volumetric expansion of metals and metal containing compounds
  • Oxidative volumetric expansion of metals and metal containing compounds
  • Oxidative volumetric expansion of metals and metal containing compounds

Examples

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Embodiment Construction

[0015] Before describing several example embodiments of the invention, it is to be understood that this disclosure is not limited to the details of architecture or processing steps set forth in the ensuing description. The invention is capable of other embodiments and of being practiced or carried out in various ways.

[0016] "Substrate" is used herein to refer to any substrate or surface of material formed on a substrate on which film processing is performed during the fabrication process. For example, substrate surfaces on which processes may be performed include materials such as silicon, silicon oxide, strained silicon, silicon-on-insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, Glass, sapphire, and other materials such as metals, metal nitrides, metal alloys, and other conductive materials, depending on the application. Substrates include, without limitation, semiconductor wafers. The substrate may be exposed t...

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Abstract

Methods comprising forming a film on at least one feature of a substrate surface are described. The film is expanded to fill the at least one feature and cause growth of the film from the at least onefeature. Methods of forming self-aligned vias are also described.

Description

technical field [0001] The present invention generally relates to methods of depositing and processing thin films. More specifically, the invention relates to processes for filling narrow trenches in substrates. Background technique [0002] The semiconductor industry is rapidly developing chips with smaller and smaller transistor sizes to achieve more functionality per unit area. As the size of devices continues to shrink, so does the gap / space between devices, increasing the difficulty of physically isolating a device from another device. Filling high-quality dielectric materials in the high-aspect-ratio trenches / spaces / gaps (often irregularly shaped) between devices has been imple- mented by existing methods (including gapfill, hardmask and spacer applications) It's getting more and more challenging. [0003] There is a need in this field for new methods for chip design with smaller critical dimensions. Additionally, there is a continuing need for high quality metal o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
CPCH01L21/76224H01L21/76831H01L21/76834H01L21/76852H01L21/76877H01L21/28202H01L21/32H01L21/76229H01L21/76232H01L21/823481H01L29/43
Inventor S·S·罗伊陈一宏K·陈A·B·玛里克S·冈迪科塔
Owner APPLIED MATERIALS INC