QLED (quantum dot LED) device and production method thereof
A device and functional layer technology, which is applied in the field of QLED devices and its preparation, can solve the problems of uneven luminescence of agglomerated and incompletely covered devices, uneven film formation of quantum dot light-emitting layers, and device instability, and achieve large-scale production. Improve the uniformity and stability of luminescence, and the effect of low cost
Inactive Publication Date: 2019-02-12
TCL CORPORATION
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Problems solved by technology
[0005] The purpose of the present invention is to provide a QLED device and its preparation method, aiming to solve the problem of uneven luminescence of the existing QLED device due to uneven film formation, loose structure, easy agglomeration and incomplete coverage of the quantum dot light-emitting layer. and device instability
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[0017] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0018] In the description of the present invention, it should be understood that the terms "first" and "second" are used for description purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.
[0019] see figure 1 , figure 1 A schematic structural diagram of a QLED de...
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Abstract
The invention belongs to the field of display devices and provides a QLED (quantum dot LED) device and a production method thereof. The QLED device is characterized in that a carbon material layer with surface functional groups and a porous silicon film layer with pore-filling quantum dots are introduced to a luminous layer; on one hand, the quantum dots fill pores of the porous silicon film layer, arrangement density and thickness of the quantum dots can be controlled easily by changing porosity of the porous silicon film layer, pore size, film thickness and the like, and luminous uniformityand stability of the QLED device are improved accordingly; on the other hand, the carbon material layer with the surface functional groups can act as a platform to sort the quantum dots, excellent conductivity of the carbon material layer helps improve carrier transport and injection, and luminous efficiency of the QLED device is improved accordingly.
Description
technical field [0001] The invention belongs to the field of display devices, in particular to a QLED device and a preparation method thereof. Background technique [0002] Quantum dot (QD) is a quasi-zero-dimensional nanomaterial, similar to superlattice and quantum well, its particle size is about 1nm-100nm, it has quantum confinement effect, surface effect, quantum size effect and quantum tunnel effect And other properties, as well as outstanding advantages such as good monochromaticity, high color purity, and narrow luminescence spectrum, it is a very promising nanomaterial. Quantum dots-based light-emitting diodes are called quantum dots light-emitting diodes (QLEDs), which are a new type of display technology. The advantages of quantum dot display are wide color gamut coverage, easy color control, and high color purity. It is considered to be a new star in display technology, and it is also considered a revolutionary representative of display technology. [0003] At ...
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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K71/00
Inventor 梁柱荣曹蔚然刘佳
Owner TCL CORPORATION