Image sensor and manufacturing method thereof
An image sensor and optical filter technology, applied in the direction of electric solid-state devices, semiconductor devices, radiation control devices, etc., can solve the problems of front-illuminated image sensor and front-illuminated image sensor dark current increase, etc., to reduce dark current , Improve the white pixel problem, reduce the effect of metal pollution
Inactive Publication Date: 2019-02-15
HUAIAN IMAGING DEVICE MFGR CORP
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[0004] Both back-illuminated image sensors and front-illuminated image sensors are particularly sensitive to metal contamination, which can lead to increased dark current in both front-illuminated image sensors and front-illuminated image sensors, resulting in white pixels
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[0021] Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. It should be noted that relative arrangements of components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present disclosure unless specifically stated otherwise.
[0022] The following description of at least one exemplary embodiment is merely illustrative in nature and in no way intended as any limitation of the disclosure, its application or uses.
[0023] Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods and devices should be considered part of the Authorized Specification.
[0024] In all examples shown and discussed herein, any specific values should be construed as illustrative only, and not as limiting. Therefore, other examples of the exemplary ...
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Abstract
The invention relates to an image sensor and a manufacturing method thereof. The manufacturing method of the image sensor comprises the following steps: providing a substrate, wherein the substrate isprovided with a first surface and a second surface opposite to the first surface; forming a silicon carbide layer on the first surface of the substrate; forming a semiconductor layer on the side, away from the substrate, of the silicon carbide layer; forming isolation structures among pixel units of the image sensor in the semiconductor layer; and forming metal interconnection layers on the pixelunits and the isolation structures, wherein the carbon carbide layer is used for adsorbing metals entering into the semiconductor layer when the metal interconnection layers are formed.
Description
technical field [0001] The present disclosure relates to image sensors and methods of manufacturing the same. Background technique [0002] Image sensors may be used to sense radiation (eg, optical radiation including, but not limited to, visible light, infrared, ultraviolet, etc.). [0003] Image sensors can be classified into back-illuminated image sensors and front-illuminated image sensors according to the way they receive radiation. The back-illuminated image sensor can receive radiation from its back, wiring and other components that may affect radiation reception are basically located on the front of the substrate, and light enters from the back of the substrate. A front-illuminated image sensor receives radiation from its front side. [0004] Both back-illuminated image sensors and front-illuminated image sensors are particularly sensitive to metal contamination, which can lead to increased dark current in front-illuminated image sensors and front-illuminated image...
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IPC IPC(8): H01L27/146
CPCH01L27/14601H01L27/1462H01L27/1464H01L27/14685
Inventor 田成俊洪纪伦吴宗祐林宗贤
Owner HUAIAN IMAGING DEVICE MFGR CORP