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A kind of preparation method of graphene

A technology of graphene and graphite powder, which is applied in the field of graphene preparation, can solve the problems of low yield, uncontrollable number of layers, and inaccurate control of graphene layers, etc., and achieves the goal of simple method and increased yield Effect

Active Publication Date: 2022-07-12
CHINA ELECTRONICS TECH GROUP CORP NO 16 INST
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Problems solved by technology

[0002] Conventional graphene preparation methods are mainly oxidation-reduction method and chemical vapor deposition method. The yield of these two preparation methods is not high. Many graphites are mixed in graphene prepared by redox method, and the purity is not high.
The chemical vapor deposition method is not precise enough to control the number of graphene layers. Often the prepared graphene generally has at least ten layers, and the number of layers cannot be controlled.

Method used

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  • A kind of preparation method of graphene

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Experimental program
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Effect test

Embodiment 1

[0019] like figure 1 , First, select nano-scale graphite powder and vacuum dry it in a flat state in a vacuum drying box at 70 ° C for 8 hours, then put the graphite powder into a special tool that can be closed, and use the isostatic pressing method to shape the powder. , in which the isostatic pressure is controlled at 50000PSI. After the end, the graphite that has been formed into a block is taken out from the special tooling, and then processed into a graphite target. After dehumidification and drying, a graphene film is deposited on the surface of the substrate by magnetron sputtering. The vacuum degree in the vacuum chamber of magnetron sputtering reaches 10 -5 The order of mbar, the RF power is set at 100W, the deposition rate is 0.15nm / s, and the deposition time is 7s to obtain three-layer graphene.

Embodiment 2

[0021] First, the nano-scale graphite powder was selected and dried in a vacuum drying oven at 90°C in a flat state for 4 hours. After that, the graphite powder was put into a special tool that can be closed, and the powder was shaped by isostatic pressing. The isostatic pressure is controlled at 60000PSI. After the end, the block graphite is taken out from the special tooling, and then processed into a graphite target. After dehumidification and drying, a graphene film is deposited on the surface of the substrate by magnetron sputtering. The vacuum degree in the vacuum chamber for controlled sputtering reaches 10 -5 The order of mbar, the RF power is set at 110W, the deposition rate is 0.16nm / s, and the deposition time is 8 s to obtain four layers of graphene.

Embodiment 3

[0023] First, the nano-scale graphite powder was selected and vacuum-dried in a flat state in a vacuum drying oven at 80 °C for 6 hours. After that, the graphite powder was put into a special tool that can be closed, and the powder was formed by isostatic pressing. The isostatic pressure is controlled at 40000PSI. After the end, the block graphite is taken out from the special tooling, and then processed into a graphite target. After dehumidification and drying, a graphene film is deposited on the surface of the substrate by magnetron sputtering. The vacuum degree in the vacuum chamber for controlled sputtering reaches 10 -5 The order of mbar, the radio frequency power is set at 120W, the deposition rate is 0.12nm / s, and the deposition time is 3s to obtain graphene with one layer of deposition.

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Abstract

The invention relates to the field of graphene preparation, in particular to a graphene preparation method, comprising the following steps: S1, fully dehumidifying and drying graphite powder in a vacuum environment; S2, loading the dried graphite powder into a special sealable container In the tooling, the powder is formed by isostatic pressing; S3, the isostatically pressed graphite is processed into a graphite target, and the graphene film is deposited on the surface of the substrate by magnetron sputtering after dehumidification and drying, that is, Obtain the desired graphene. The invention can effectively increase the yield of graphene and precisely control the deposition thickness of graphene, and the method is simple, reliable and practical.

Description

technical field [0001] The invention relates to the field of graphene preparation, in particular to a graphene preparation method, which provides a new path for graphene preparation. Background technique [0002] Conventional graphene preparation methods are mainly oxidation-reduction method and chemical vapor deposition method. The yield of these two preparation methods is not high. The graphene prepared by oxidation-reduction method has a lot of graphite doped, and the purity is not high. The control of the number of graphene layers by chemical vapor deposition is not precise enough, and the graphene usually prepared generally has at least ten layers, and the number of layers cannot be controlled. Therefore, the present invention aims to solve the problems of precise control of the yield and thickness of graphene preparation. SUMMARY OF THE INVENTION [0003] The object of the present invention is to solve the deficiencies of the above-mentioned prior art, and provide a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/19
CPCC01B32/19
Inventor 辛存良陈剑王丽傅斌范仙红占化斌张亚辉何世安
Owner CHINA ELECTRONICS TECH GROUP CORP NO 16 INST
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