MEMS structure, and electrostatic capacitance type sensor, piezoelectric sensor, and acoustic sensor having MEMS structure

A capacitive sensor and sound pressure conversion technology, applied in piezoelectric devices/electrostrictive devices, piezoelectric/electrostrictive transducer microphones, sensors, etc. Effect of high SN ratio and improved pressure resistance

Active Publication Date: 2019-03-01
MMI SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] On the other hand, when a large pressure is applied to the diaphragm 122 from the side of the back plate 123, since there is no area where the diaphragm 122 and the silicon substrate 121 overlap when viewed from the normal direction of the diaphragm 122, the diaphragm 122 Since the opening (back chamber) 121a of the silicon substrate 121 can be penetrated, the displacement increases, and the stress may concentrate on the beam portion (not shown) supporting the diaphragm 122, causing damage

Method used

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  • MEMS structure, and electrostatic capacitance type sensor, piezoelectric sensor, and acoustic sensor having MEMS structure
  • MEMS structure, and electrostatic capacitance type sensor, piezoelectric sensor, and acoustic sensor having MEMS structure
  • MEMS structure, and electrostatic capacitance type sensor, piezoelectric sensor, and acoustic sensor having MEMS structure

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Embodiment 1

[0077] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The embodiments shown below are one aspect of the invention of the present application, and do not limit the technical scope of the invention of the present application. In addition, the present invention can be applied to the entire capacitive sensor, and a case where the capacitive sensor is used as an acoustic sensor will be described below. However, as long as the capacitive sensor of the present invention detects the displacement of the diaphragm, it can also be used as a sensor other than the acoustic sensor. For example, it can be used as an acceleration sensor, an inertial sensor, etc. in addition to a pressure sensor. In addition, it is obvious that it can also be used as an element other than a sensor, such as a speaker that converts an electrical signal into a displacement, and the like. In the following, an example is shown in which the vibrating portion of ...

Embodiment 2

[0103] Next, Example 2 of the present invention will be described. In this embodiment, particularly, the area of ​​the outer shape of the vibrating part 11 arranged outside the outer shape of the rear chamber 2 is defined as the area closer to the two ends 11b of each side, that is, the support part 12, and the two ends 11b An example in which a convex stopper abuts against the substrate 3 when the vibrator 11 is displaced toward the substrate 3 side will be described.

[0104] Figure 11 The figure which shows the vibration part 11, the support part 12, the fixed film 13, and the rear chamber 2 of this Example seen from the normal direction. Figure 11 (a) is a top view of the whole, Figure 11 (b) is an enlarged view of the vicinity of the support portion 12 . in addition, Figure 12 (a) means Figure 11 (b) A-A' section, Figure 12 (b) means Figure 11 (b) BB' section. Such as Figure 11 (b) and Figure 12 As shown in (b), in this embodiment, particularly, the vib...

Embodiment 3

[0106] Next, Example 3 of the present invention will be described. In the present embodiment, the distance between the outer shape of the vibrating portion 11 and the outer shape of the rear chamber 2 is separated, particularly in a region where the angle between the outer shape of the vibrating portion 11 and the outer shape of the rear chamber 2 is less than or equal to a predetermined angle. An example of a predetermined distance or more will be described.

[0107] Figure 13 It is a diagram showing a problem when the outer shape of the vibrator 11 (that is, the end face in a side view, the same below) is too close to the outer shape (end face) of the rear chamber 2 . Figure 13 (a) is a diagram showing the relationship between the outer shape (end surface) of the vibrator 11 and the outer shape (end surface) of the rear chamber 2 in a state where no pressure acts on the diaphragm 5 . Figure 13 (b) is a diagram showing a phenomenon that occurs when pressure acts on the d...

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Abstract

The present invention provides a technique which enables a high SN ratio to be obtained, and which enables an increase in resistance to input pressure in an electrostatic capacitance type sensor manufactured using a MEMS technique. The electrostatic capacitance type sensor converts a displacement of a diaphragm into a change in an electrostatic capacitance between the diaphragm and a back plate, and is configured in such a way that part of the external shape of the diaphragm is disposed inward of an opening in a base plate, when seen in a normal line direction, and another part of the externalshape of the diaphragm is disposed outward of the opening in the base plate, when seen in the normal line direction.

Description

technical field [0001] The invention relates to a MEMS structure and a capacitive sensor with the MEMS structure, a piezoelectric sensor and an acoustic sensor with the capacitive sensor or the piezoelectric sensor. More specifically, it relates to capacitive sensors with diaphragms, piezoelectric sensors, and acoustic sensors formed using MEMS technology. Background technique [0002] Currently, a microphone using an acoustic sensor called an ECM (Electret Condenser Microphone) is sometimes used as a small microphone. However, ECMs are weak in heat resistance, and microphones using capacitive sensors manufactured using MEMS (Micro Electro Mechanical Systems) technology have excellent performance in terms of dataization and miniaturization. Therefore, in recent years, many A MEMS microphone is used (for example, refer to Patent Document 1). [0003] In the capacitive sensor described above, MEMS technology may be used to realize a method in which a diaphragm vibrating unde...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H04R7/04B81B3/00H01L29/84H04R1/02H04R7/22H04R17/02H04R19/04
CPCB81B3/00H01L29/84H04R1/02H04R7/04H04R7/22H04R17/02H04R19/04H04R19/005H04R2201/003B81B2201/0257B81B2203/0127B81B3/0072B81B2201/0264B81B3/0018H04R1/025B81B3/0021H04R7/08
Inventor村上步井上匡志堀本恭弘
OwnerMMI SEMICON CO LTD