Packaging film and its application

A technology for encapsulating films and films, applied in semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of poor performance stability of electronic devices, poor water-oxygen barrier ability, and poor water-oxygen barrier properties, etc., to achieve the packaging effect. Good, enhanced water and oxygen barrier, long working life

Active Publication Date: 2020-11-20
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to overcome the above-mentioned deficiencies in the prior art, provide a packaging film and its preparation method, to solve the existing technical problems such as the use of ceramics as the poor water and oxygen barrier capacity of the packaging film
[0009] Another object of

Method used

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  • Packaging film and its application
  • Packaging film and its application
  • Packaging film and its application

Examples

Experimental program
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Effect test

preparation example Construction

[0049] In another aspect, on the basis of the electronic device described above, an embodiment of the present invention provides a method for manufacturing the electronic device. combine Figure 1-3 , the preparation method of the electronic device includes the following steps:

[0050] providing a substrate, the substrate comprising a substrate and electronic components disposed on the substrate;

[0051] The packaging film 20 is formed on the substrate to package the electronic device.

[0052] The term "encapsulation" used in the present invention refers to covering the parts of the electronic components that need to be packaged with an encapsulation film layer. According to the realized characteristics or work requirements, different electronic component structures have different requirements for the packaged parts. Specifically, the The part where the above-mentioned electronic component needs to be packaged may be all the top surface and the side surface of the electro...

Embodiment 1

[0074] This embodiment provides an electronic device. It includes a substrate, QLED electronic components combined on the substrate and a packaging film for packaging the QLED electronic components. The structure of the electronic device is: ITO substrate / PEDOT:PSS (50nm) / poly-TPD (30nm) / quantum dot light-emitting layer (20nm) / ZnO (30nm) / silver (70nm) / encapsulation film (700nm). Wherein, the material of the packaging film is SiO 2 Ceramic grains and metal aluminum, metal aluminum filled in SiO 2 Between grains and grain boundaries, and aluminum is 1.5% of the mass of the packaging film. The thickness of the packaging film 20 is 700 nm.

[0075] The electronic device of this embodiment is prepared according to the following method:

[0076] S11: The silicon oxide nanopowder doped with aluminum metal nanoparticles is blended and ball milled by solid phase method, wherein the mass of aluminum metal nanoparticles accounts for 1.5wt% of the silicon oxide / aluminum composite mate...

Embodiment 2

[0080] This embodiment provides an electronic device. It includes a substrate, QLED electronic components combined on the substrate and a packaging film for packaging the QLED electronic components. The structure of the electronic device is: ITO substrate / PEDOT:PSS (50nm) / poly-TPD (30nm) / quantum dot light-emitting layer (20nm) / ZnO (30nm) / silver (70nm) / encapsulation film (700nm). Wherein, the material of the packaging film is to include SiO 2 Ceramic grains and metal aluminum, metal aluminum filled in SiO 2 Between grains and grain boundaries, aluminum accounts for 5% of the packaging film mass. The thickness of the packaging film 20 is 700 nm.

[0081] Its preparation method can refer to the method in the above-mentioned Example 1, only need to adjust the content of the metal in the target material to adjust, and annealing treatment is performed after the coating is completed to ensure that the low-melting point metal is doped between the ceramic grain boundaries, and the a...

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Abstract

The invention discloses an encapsulation film, a preparation method and application thereof. The packaging film of the present invention includes ceramics and metal filled between ceramic grains. The packaging film of the invention has excellent water and oxygen barrier effect and excellent thermal conductivity, ensures the stability of the electrochemical performance of the packaged electronic components, and prolongs the working life of the electronic components. The preparation method ensures the structural stability of the encapsulation film and excellent water and oxygen barrier performance. Applications thereof include applications in electronic devices.

Description

technical field [0001] The invention belongs to the technical field of encapsulation films, and in particular relates to an encapsulation film, an electronic device containing the encapsulation film, a preparation method and an application thereof. Background technique [0002] Encapsulation films can be used to protect electronic components (such as diodes), solar cells, or secondary batteries that are sensitive to external factors such as moisture or oxygen. [0003] The lifetime of electronic components is a very important parameter. Encapsulation is a crucial link to improve the life of electronic components and make them reach commercial levels. For electronic components, encapsulation is not only physical protection to prevent scratches, but more importantly, to prevent the penetration of water vapor and oxygen in the external environment. The water vapor in these environments penetrates into the device, which will accelerate the aging of the device. Therefore, the ...

Claims

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Application Information

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IPC IPC(8): H01L23/29H01L23/367H01L23/373H01L21/56H01L51/52H01L51/56
CPCH01L21/56H01L23/29H01L23/291H01L23/3672H01L23/3731H01L23/3736H10K50/844H10K50/87H10K71/00
Inventor 朱佩曹蔚然
Owner TCL CORPORATION
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