Unlock instant, AI-driven research and patent intelligence for your innovation.

Solid-state image sensor and image capture apparatus

A solid-state image and sensor technology, applied in image enhancement, image analysis, image communication, etc., can solve the problem of increasing circuit scale, achieve the effect of suppressing the increase of circuit scale, and realizing image acquisition and distance measurement

Active Publication Date: 2019-03-05
CANON KK
View PDF13 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, if the SPAD is to be used for both image acquisition and ranging, the circuit scale will increase

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solid-state image sensor and image capture apparatus
  • Solid-state image sensor and image capture apparatus
  • Solid-state image sensor and image capture apparatus

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0028] will refer to Figure 1~4C The solid-state image sensor and imaging apparatus according to the first embodiment will be described. figure 1 A solid-state image sensor according to the present embodiment is shown.

[0029] Such as figure 1 As shown, the solid-state image sensor 100 according to this embodiment includes a vertical scanning unit 101 , a timing generator (TG) 102 , a column memory 103 and a horizontal scanning unit 104 . The solid-state image sensor 100 is also provided with a pixel array 130 . The pixel array 130 is provided with a plurality of unit pixels 140 , wherein each unit pixel 140 includes a plurality of pixels 110 . figure 1 One unit pixel 140 among a plurality of unit pixels 140 provided in the pixel array 130 is shown. The solid-state image sensor 100 includes a plurality of pixels 110 arranged in a matrix. Although four pixels 110 a , 110 b , 110 c , and 110 d are shown here to simplify illustration, a large number of pixels 110 are actua...

no. 2 example

[0079] will refer to Figure 4B , 5 and 6 are used to describe the solid-state image sensor and imaging apparatus according to the second embodiment. To and Figure 1-4A Like constituent elements of the illustrated solid-state image sensor and the like according to the first embodiment are assigned the same reference numerals, and these constituent elements are not described or briefly described.

[0080] The solid-state image sensor 500 according to the present embodiment can make the G pixels 110b and 110c work in the imaging mode while making the R pixels 110a and the B pixels 110d work in the ranging mode. The solid-state image sensor 500 according to the present embodiment can also make the G pixels 110b and 110c work in the ranging mode while making the R pixels 110a and the B pixels 110d work in the imaging mode.

[0081] Figure 4B is a block diagram showing the imaging apparatus 400 according to the present embodiment. Such as Figure 4B As shown, the light emit...

no. 3 example

[0095] will refer to Figure 4C and Figure 7-11 A solid-state image sensor and imaging apparatus according to a third embodiment will be described. To and Figure 1~6 The same constituent elements of the illustrated solid-state image sensor or the like according to the first embodiment or the second embodiment are assigned the same reference numerals, and these constituent elements are not described or briefly described.

[0096] The solid-state image sensor according to the present embodiment is provided with pixels 810c capable of detecting infrared light.

[0097] Figure 4C is a block diagram showing the imaging apparatus 400 according to the present embodiment. Such as Figure 4C As shown, the imaging apparatus 400 according to the present embodiment is provided with an infrared light emitting unit 409IR for emitting infrared light.

[0098] Figure 7 Each area of ​​the pixel array 830 provided in the solid-state image sensor 800 according to the present embodimen...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A solid-state image sensor and an image capture apparatus are provided that can realize image acquisition and distance measurement while restraining the circuit scale from increasing. The solid-stateimage sensor includes a plurality of pixels each including a sensor unit that generates a pulse with a frequency that is based on a reception frequency of a photon, and a counter that can operate in afirst mode of counting the number of pulses of a signal generated by the sensor unit, and a second mode of counting the number of pulses of a predetermined signal that is based on an elapsed time from a timing at which light is emitted from a light emitting unit.

Description

technical field [0001] The present invention relates to solid-state image sensors and imaging devices. Background technique [0002] The technique of using an avalanche photodiode (APD) to detect a single photon has traditionally been proposed. If a single photon is incident on an avalanche photodiode to which a reverse bias voltage greater than a breakdown voltage is applied, carriers are generated, avalanche multiplication occurs, and a large current is generated. Single photons can be detected based on this current. This avalanche photodiode is called a SPAD (Single Photon Avalanche Diode). Japanese Patent Laid-Open No. 2014-81253 discloses a photodetector in which an avalanche photodiode is arranged in a light receiving device. Japanese Patent Laid-Open No. 2015-173432 discloses an image sensor in which each pixel includes: a storage capacitor for storing charges generated by a photoelectric conversion element; a comparator for comparing the voltage at the storage cap...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H04N5/369H01L27/146G01S7/4863G01S17/894
CPCH01L27/14601H04N25/70G01S7/4863H01L27/14607H01L27/14621H01L27/14645H01L27/14649H01L27/14627G01S17/894H04N25/42H04N25/705H04N25/702H04N25/772G01C3/08H04N25/00G06T7/521H04N5/06H01L31/107G06T2207/10028H04N25/745H04N25/40H04N25/77H04N25/75
Inventor 小林宽和铃木聪史熊木聪
Owner CANON KK