Differential multi-bit through silicon via structure and preparation method thereof

Abstract

The invention discloses a differential multi-bit through silicon via structure and a preparation method thereof. the differential multi-bit through silicon via structure comprises a silicon substrate,a first dielectric layer, a first reference line, a second dielectric layer, a carbon nanotube bundle, a third dielectric layer, a second reference line, a first metal bonding pad, a second metal bonding pad, a third metal bonding pad and a fourth metal bonding pad. According to the structure, the carbon nanotube is used as a transmission channel, and four metal bonding pads are arranged at the two ends of the carbon nanotube to form two signal transmission channels, so that the positive signal and the negative signal are transmitted respectively; the number of I / O ports between layers is doubled without enlarging the extra chip area; by virtue of the differential structure design of the positive signal and the negative signal, common mode noise and electromagnetic interference can be effectively inhibited, so that the transmission quality of the high-speed signals is improved, the size of the differential transmission structure is remarkably reduced, and the occupied area of the differential transmission structure is reduced, and the utilization rate of the chip area is effectively improved.

Description

Technical field [0001] The invention belongs to the technical field of three-dimensional integration, and relates to a differential multi-bit through silicon via structure and a preparation method thereof. Background technique [0002] Three-dimensional integrated circuit is a new type of packaged semiconductor integrated circuit. It has the advantages of small package size, high interconnection efficiency, low chip power loss and low cost. It solves the chip size problem caused by the development of traditional integrated circuits and achieves performance. improvement of. Through silicon via technology, multilayer chips achieve vertical interconnection, so three-dimensional integrated circuits can integrate a large number of functions in a small footprint, especially greatly shortening the electrical path through the device and achieving faster operation. [0003] Differential signals are more and more widely used in high-speed circuit design, and the most critical signals in cir...

AI Technical Summary

Problems solved by technology

However, the existing ground-signal-signal-ground structure differential TSV requires two TSVs to transmit differential signals, which has the disadvantage of occupying a large chip area.

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