Polysilicon preparation regulating and controlling method and device
A polysilicon preparation and control device technology, which is applied in the direction of silicon, halosilane, halide silicon compounds, etc., can solve the problems of difficult determination of abnormal preparation parameters, high raw material loss, and low preparation efficiency, so as to avoid high cost and improve efficiency , The effect of accurate judgment of running status
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no. 1 example
[0028] According to the applicant’s research, it is found that the existing polysilicon preparation technology cannot automatically determine the causes of abnormal parameters in the polysilicon preparation process in each preparation process flow. First, the first embodiment of the present invention provides a polysilicon preparation process. Preparation method. The polysilicon preparation method can be applied to electronic devices capable of calculation and logic control, such as computers and smart phones, and can also be a system composed of this type of electronic devices and polysilicon manufacturing equipment such as trichlorosilane synthesis furnaces and reduction furnaces. Please refer to figure 1 , figure 1 This is a schematic flow chart of a method for preparing polysilicon according to the first embodiment of the present invention.
[0029] Step S11: The raw silicon powder and the hydrogen chloride synthesized by the hydrogen chloride synthesis furnace are fed into th...
no. 2 example
[0058] In order to cooperate with the polysilicon preparation control method provided by the first embodiment of the present invention, the second embodiment of the present invention also provides a polysilicon preparation control device 100.
[0059] Please refer to Figure 4 , Figure 4 It is a schematic diagram of a module of a polysilicon preparation control device 100 provided by the second embodiment of the present invention.
[0060] The polysilicon preparation and control device 100 includes a trichlorosilane synthesis module 110, a first parameter detection module 120 and a first control module 130.
[0061] The trichlorosilane synthesis module 110 is used to send raw silicon powder and hydrogen chloride synthesized by the hydrogen chloride synthesis furnace into the trichlorosilane synthesis furnace for trichlorosilane synthesis.
[0062] The first parameter detection module 120 is used to obtain the STC content, DCS content, and HCL content in the by-products of the trichlor...
no. 3 example
[0070] Please refer to Figure 5 , Figure 5 It is a structural block diagram of an electronic device 200 applicable to the embodiments of the present application provided by the third embodiment of the present invention. The electronic device 200 provided in this embodiment may include a polysilicon preparation control device 100, a memory 201, a processor 203, a peripheral interface 204, an input and output unit 205, an audio unit 206, and a display unit 207.
[0071] The components of the memory 201, the processor 203, the peripheral interface 204, the input output unit 205, the audio unit 206, and the display unit 207 are directly or indirectly electrically connected to each other to realize data transmission or interaction. For example, these components can be electrically connected to each other through one or more communication buses or signal lines. The polysilicon preparation control device 100 includes at least one software function module that can be stored in the me...
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