Method for improving the precision of OPC model

Abstract

The invention discloses a method for improving the precision of an OPC model. The method comprises the following steps of S01, collecting a set of measuring values on a wafer; S02, processing the measuring values, and filtering out data points which are not credible in measurement; S03, building an initial OPC model based on the measuring data; S04, conducting convolution between a layout graph and an optical signal according to a main graph, and correcting the initial OPC model; S05, conducting convolution between the layout graph and the optical signal according to an auxiliary graph, and further correcting the initial OPC model; and S06, obtaining a corrected OPC model with higher precision. According to the method, signal convolution operation processing is carried out for the main graph and the auxiliary graph; mask manufacturing errors of the main graph and the auxiliary graph are corrected; and the precision of the OPC model can be effectively improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing technology, and more specifically, relates to a method for improving the accuracy of an OPC model. Background technique [0002] With the continuous development of integrated circuits and the continuous development of manufacturing technology towards smaller dimensions, the photolithography process has become the main bottleneck restricting the development of integrated circuits to smaller feature sizes. In deep sub-micron semiconductor manufacturing, the size of the key pattern is much smaller than the wavelength of the light source. Due to the diffraction effect of light, the pattern projected on the silicon wafer by the mask will change greatly, such as the change of line width and the corner Various optical proximity effects such as the rounding of the wire and the shortening of the line length. [0003] In order to compensate for the influence of these ...

AI Technical Summary

Problems solved by technology

The existence of model error limits the accuracy of OPC model

The size of the auxiliary pattern is usually half or even smaller than the size of the main pattern. During the mask manufacturing process, it is more likely to cause dimensional errors, which will affect the accuracy of the model, thereby further affecting the performance of the device and product yield.

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