Organic electroluminescence device and display device
An electroluminescence device and electroluminescence technology, which are applied in the fields of electro-solid devices, electrical components, semiconductor devices, etc., can solve the problems of low luminous efficiency and low life of the device, and achieve improved luminous efficiency, good energy level matching, and improved Effect of Luminous Efficiency and Lifespan
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Embodiment 1-11
[0066] Such as image 3 As shown, each of Examples 1-11 provides an organic electroluminescent device, which in turn includes an anode, a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), and a light emitting layer (EML) , Hole blocking layer (HBL), electron transport layer (ETL), electron injection layer (EIL) and cathode.
[0067] Among them, the device structure of embodiment 1 is: ITO / HATCN (10nm) / NPB (40nm) / electron blocking (5nm) / body: 30% T-76: 5% F-8 (30nm) / hole blocking (5nm) ) / TPBI(30nm) / LiF(1nm) / Al(200nm).
[0068] The device structure of Examples 2-11 is basically the same as that of Example 1, except that the materials of the light-emitting layer, the hole blocking layer, and the electron blocking layer are different.
[0069] In the organic electroluminescent devices provided in Examples 1-11, the specific selection and doping concentration of the materials of the light-emitting layer, the hole blocking layer and the electron ...
Embodiment 12-15
[0091] Such as image 3 As shown, Examples 12-15 respectively provide an organic electroluminescent device. The device structure is basically the same as that of Example 1. The only difference is that the doping concentration of the sensitizer in the light-emitting layer is different. The doping concentration and the test results of the corresponding organic electroluminescent devices are shown in Table 3.
[0092] table 3
[0093]
[0094] From the test results in Table 3 in combination with Table 2, it can be seen that as the doping concentration of the TADF material as the sensitizer in the light-emitting layer changes, the luminous efficiency and service life of the corresponding OLED device also change. When the doping concentration of the TADF material in the light-emitting layer is 5-40 wt%, the OLED device has relatively best luminous efficiency and service life. In particular, when the doping concentration of the TADF material is 30 wt%, the performance of the OLED devic...
Embodiment 16-19
[0097] Such as image 3 As shown, Examples 16-19 respectively provide an organic electroluminescent device. The device structure is basically the same as that of Example 2, except for the thickness of the hole blocking layer. The thickness of the hole blocking layer in specific examples 16-19 and the test results of the corresponding organic electroluminescent devices are shown in Table 4.
[0098] Table 4
[0099]
[0100] It can be seen from Table 4 in combination with the test results of the foregoing Examples 1-15 that when TADF material is used as the sensitizer in the light-emitting layer, and both the hole blocking layer and the electron blocking layer contain TADF material, the thickness of the hole blocking layer increases with Change, the luminous efficiency and service life of OLED devices have changed. When the thickness of the hole blocking layer is 1-100nm, especially 1-50nm, the luminous efficiency of the OLED device is relatively high and the lifetime is relativel...
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