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An artificial surface plasmon radiator and control method based on f-p cavity loading

An artificial surface plasmon and F-P technology, applied in the field of vacuum electronics, can solve problems such as difficult to achieve super radiation, difficult to achieve, complex structure, etc.

Active Publication Date: 2020-05-05
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

1. Because it is difficult to obtain good-quality clustered electron beams in the actual process, superradiation is difficult to achieve
2. At this stage, many structures that increase the interaction field strength are relatively complex, affected by the actual processing technology and assembly technology, it is difficult to realize in the experiment
3. Limited by the cathode process, it is difficult to obtain an electron gun with a high current density
Fourth, extending the length of the interaction circuit means that the electron beam needs to maintain good focusing characteristics during long-distance transmission, which is difficult to achieve in actual experiments

Method used

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  • An artificial surface plasmon radiator and control method based on f-p cavity loading
  • An artificial surface plasmon radiator and control method based on f-p cavity loading
  • An artificial surface plasmon radiator and control method based on f-p cavity loading

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Embodiment 1

[0040] Such as figure 1 As shown, the artificial surface plasmon radiator based on the F-P cavity loading of the present embodiment includes: a metal grating and a Fabry-Perot F-P cavity; wherein, a Fabry-Perot F-P cavity is set above the metal grating ; The gap between the F-P cavity and the metal grating is g, less than the attenuation distance of the SSP perpendicular to the direction of the metal grating, and greater than or equal to the width of the electron beam; the unit period length of the metal grating is p, the metal width is a, and the groove depth is h; The Fabry-Perot F-P cavity includes first and second mirrors with length L c ; The electron beam passes through the gap between the F-P cavity and the metal grating, the SSP is excited on the surface of the metal grating, the working voltage of the electron beam is U, and the current is I.

[0041] In this embodiment, p=20 μm, a=10 μm, h=69 μm, the gap between the F-P cavity and the grating g=5 μm, and the cavity ...

Embodiment 2

[0049] In this embodiment, the structure is the same as the first embodiment, the interaction point is located in the forward wave region, the working voltage U=3kV of the electron beam, and the current I=20mA.

[0050] The control method of the artificial surface plasmon radiator based on F-P cavity loading in this embodiment includes the following steps:

[0051] 1) Design structural parameters;

[0052] 2) According to the unit period length, metal width and groove depth of the metal grating, the dispersion line of the metal grating is obtained, and the wave loss and frequency corresponding to the midpoint of the dispersion line are obtained. The area before the midpoint of the dispersion line is the forward wave The area after the midpoint of the dispersion line is the backward wave area; the dispersion line of the electron beam is obtained according to the operating voltage of the electron beam; the intersection point of the dispersion line of the electron beam and the di...

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Abstract

The invention discloses an artificial surface plasmon radiator based on F-P cavity loading and a control method. A metal grating and a Fabry-Perot F-P cavity are used, an electron beam passes throughthe gap between the metal grating and the Fabry-Perot, SSP is excited on the surface of the metal grating, the SSP is amplified through the interaction of SSP and free electron beam-wave interaction,when a power flow reaches a mirror of the F-P cavity, a part of power flow is reflected back into the F-P cavity, the beam-wave interaction continues, the remaining part of the power flow is outputtedfrom the F-P cavity and the metal grating, and the artificial surface plasmon radiator is achieved through a regenerative amplification mechanism. In the present invention, the F-P cavity effectivelyprolongs an interaction distance, and the high interaction efficiency can be obtained in a short interaction circuit, especially in an on-chip terahertz source system with weak electron beam current.The artificial surface plasmon radiator is simple and effective and can be used in a terahertz device and other vacuum electronic devices based on free electron beams.

Description

technical field [0001] The invention relates to the field of vacuum electronics, in particular to an artificial surface plasmon radiator and a control method based on F-P cavity loading. Background technique [0002] Artificial surface plasmon (Spoof surface plasmon, SSP) generation of terahertz radiation source based on free electron beam and periodic structure surface has been one of the research hotspots in recent years. However, the interaction efficiency of this mechanism is low, and how to improve the interaction efficiency is also a research hotspot in recent years. At present, the methods for improving the interaction efficiency of free electron beams and SSPs can be roughly divided into the following categories: 1. Grouped electron beams. Compared with continuous electron beams, grouped electron beams and SSPs are more likely to obtain efficient interaction. This mechanism is also known as superradiation. 2. Increase the electric field intensity of the electron be...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01Q15/00
CPCH01Q15/0013H01Q15/0046H01Q15/0086
Inventor 杜朝海朱娟峰包路遥刘濮鲲
Owner PEKING UNIV
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