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Packaging structure of crimping type dual-core GCT

A packaging structure, crimping technology, applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problem of uneven transmission of current drive signals, double gate control signals cannot be drawn out of the shell and drive circuit boards, and current is concentrated. and other problems, to meet the requirements of heat dissipation characteristics, small size, and ensure the effect of transmission speed

Active Publication Date: 2019-03-29
XIAN UNIV OF TECH
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a packaging structure of a press-connected double-core GCT, which solves the current concentration during the switching process caused by the serious uneven transmission of the current drive signal in the prior art, and the inability to lead the double gate control signal to the shell External connection problem with the driver circuit board

Method used

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  • Packaging structure of crimping type dual-core GCT
  • Packaging structure of crimping type dual-core GCT
  • Packaging structure of crimping type dual-core GCT

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Embodiment Construction

[0031] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0032] refer to figure 1 , the cross-section (along the radial direction) structure of the dual-core GCT chip 3 in the packaging structure of the present invention is that the embodiment cathode strip is provided with 9 rings in total, and GCT-A is positioned at the center of the chip, and its inner gate G A It is located between the 3 rings and 4 rings of the cathode strip; GCT-B is located on the periphery of the chip, and its outer gate G B It is located at the junction of the chip cathode strip 9 ring (active area) and the terminal area; an isolation area is set between GCT-A and GCT-B, and the isolation area adopts a pnp structure to realize isolation.

[0033] refer to figure 2 , is the top view structure of the gate in the packaging structure of the present invention, the inner gate G A and outer gate G B For the concentric settin...

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Abstract

The invention discloses a packaging structure of a crimping type dual-core GCT. The structure sequentially includes a metal tube cover, an anode molybdenum sheet, a dual-core GCT chip, a cathode molybdenum sheet, an inner gate kit, an outer gate kit and a metal tube seat which are crimped from up to down, on the outer circle surface, an upper ceramic cup is arranged between the inner gate kit andthe outer gate kit, and a lower ceramic cup is arranged between the inner gate kit and the outer gate kit and the metal tube seat. The structure is advantaged in that the inner gate kit and the outergate kit are connected and matched through a groove on an annular insulation seat, dual-gate current signals are mutually isolated and led outside a tube casing and are connected with a driving circuit board, the integral structure is compact, thermal and electrical reliability is high, and the structure completely satisfies practical requirements of the dual-core GCT.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a packaging structure of a crimping double-core GCT. Background technique [0002] Dual-core GCT is a new type of power semiconductor device developed on the basis of integrated gate commutated thyristor (IGCT), which integrates two GCTs with different characteristics (ie GCT-A and GCT-B) on the same chip and integrated with the gate drive board to form a power assembly. [0003] In the dual-core GCT structure, GCT-A and GCT-B have the same vertical structure and shared anode and cathode, and use two independent gates to control GCT-A and GCT-B respectively; and GCT-A and GCT- The carrier lifetimes in B are different. When turned on, GCT-A and GCT-B are turned on at the same time, and the dual-core GCT has low on-state loss due to the high carrier life of GCT-A; when turned off, GCT-A is turned off first, and GCT-B is delayed Turn off, the dual-core GCT has l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/057H01L23/367
CPCH01L23/057H01L23/367
Inventor 王彩琳安静杨晶
Owner XIAN UNIV OF TECH
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