Grinding head and chemical mechanical grinding equipment

A technology of grinding head and main body, used in grinding machine tools, grinding devices, metal processing equipment, etc., can solve the problems of increasingly demanding requirements, dishing and flatness that cannot meet the requirements.

Inactive Publication Date: 2019-04-12
YANGTZE MEMORY TECH CO LTD
View PDF9 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] During the grinding process, dishing and erosion defects are often prone to appear in the filling area. With the continuous development of integrated circuit technology and the continuous improvement of integration, the requirements for manufacturing processes are becomin

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Grinding head and chemical mechanical grinding equipment
  • Grinding head and chemical mechanical grinding equipment
  • Grinding head and chemical mechanical grinding equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0028] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0029] Secondly, the present invention is described in detail in combination with schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the structure will not be partially enlarged according to the general scal...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a grinding head and chemical mechanical grinding equipment. The grinding head comprises a main body component for bearing wafers, a connecting component, a metal clamping ring and a ground lead, wherein the connecting component is fixed to the main body component; the connecting component comprises a conductive material; the clamping ring is arranged on the outer circumference of the main body component; the clamping ring is made of a conductive material; and a metal material of the connecting component is electrically connected with the clamping ring through the electrical connection line. Through the electrical connection line, charges unevenly distributed on the wafers caused by by-products generated by reaction during grinding can be conducted to the ground end,therefore, the planarization defect caused by uneven charges is avoided, and the planarization degree is increased.

Description

technical field [0001] The invention relates to the field of semiconductor equipment, in particular to a grinding head and chemical mechanical grinding equipment. Background technique [0002] Chemical Mechanical Planarization (CMP) is a process for planarizing the surface of a wafer in the semiconductor manufacturing process. In the process of chemical mechanical polishing, the wafer is placed on the grinding head, the polishing surface of the wafer faces the polishing pad, and the pressure is applied to the wafer through the grinding head. The relative movement between them and the chemical reaction with the polishing liquid realize the planarization of the wafer surface. [0003] During the grinding process, dishing and erosion defects are often prone to appear in the filling area. With the continuous development of integrated circuit technology and the continuous improvement of integration, the requirements for manufacturing processes are becoming more and more stringen...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B24B37/27B24B37/34B24B37/00
CPCB24B37/00B24B37/27B24B37/34
Inventor 王光毅蒋阳波杨俊铖高林
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap