Grinding head and chemical mechanical grinding equipment

Abstract

The invention provides a grinding head and chemical mechanical grinding equipment. The grinding head comprises a main body component for bearing wafers, a connecting component, a metal clamping ring and a ground lead, wherein the connecting component is fixed to the main body component; the connecting component comprises a conductive material; the clamping ring is arranged on the outer circumference of the main body component; the clamping ring is made of a conductive material; and a metal material of the connecting component is electrically connected with the clamping ring through the electrical connection line. Through the electrical connection line, charges unevenly distributed on the wafers caused by by-products generated by reaction during grinding can be conducted to the ground end,therefore, the planarization defect caused by uneven charges is avoided, and the planarization degree is increased.

Description

technical field [0001] The invention relates to the field of semiconductor equipment, in particular to a grinding head and chemical mechanical grinding equipment. Background technique [0002] Chemical Mechanical Planarization (CMP) is a process for planarizing the surface of a wafer in the semiconductor manufacturing process. In the process of chemical mechanical polishing, the wafer is placed on the grinding head, the polishing surface of the wafer faces the polishing pad, and the pressure is applied to the wafer through the grinding head. The relative movement between them and the chemical reaction with the polishing liquid realize the planarization of the wafer surface. [0003] During the grinding process, dishing and erosion defects are often prone to appear in the filling area. With the continuous development of integrated circuit technology and the continuous improvement of integration, the requirements for manufacturing processes are becoming more and more stringen...

AI Technical Summary

Problems solved by technology

[0003] During the grinding process, dishing and erosion defects are often prone to appear in the filling area. With the continuous development of integrated circuit technology and the continuous improvement of integration, the requirements for manufacturing processes are becoming more and more stringent, such as In the copper manufacturing process of 3D NAND, the standard (spec) of dishing and erosion of CMP is much smaller than the common standard of 200-300 Angstroms, and the planarization degree of existing CMP equipment cannot meet this requirement

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