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Device for coupling microwave resonance cavity with self-organization germanium-silicon nanowire quantum dots

A microwave resonant cavity and nanowire technology, applied in resonators, nanotechnology, nanotechnology, etc., can solve the problems of difficult large-scale integration and expansion of quantum chips, limited computing power of quantum chips, and limited number of qubits, etc. Effects of strong spin-orbit coupling strength, long spin decoherence time, and excellent qubits

Pending Publication Date: 2019-04-12
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the limited number of qubits on the quantum chips prepared so far, the computing power of the current quantum chips is also limited.
Coupling multiple quantum dots by direct coupling will weaken the coupling strength rapidly as the distance between quantum dots increases, so it is difficult to be used for large-scale integration and expansion of quantum chips

Method used

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  • Device for coupling microwave resonance cavity with self-organization germanium-silicon nanowire quantum dots
  • Device for coupling microwave resonance cavity with self-organization germanium-silicon nanowire quantum dots
  • Device for coupling microwave resonance cavity with self-organization germanium-silicon nanowire quantum dots

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Embodiment Construction

[0066] In order to describe the present invention more clearly, the present invention will be introduced in detail below in conjunction with specific drawings.

[0067] An embodiment of the present invention provides a microwave resonant cavity coupled self-organized silicon germanium nanowire quantum dot device, the device comprising:

[0068] substrate structure;

[0069] In some embodiments, the substrate structure includes:

[0070] Silicon substrate;

[0071] a silicon buffer layer formed on the silicon substrate;

[0072] a germanium layer grown on the silicon buffer layer;

[0073] And the silicon cladding layer and the silicon dioxide layer formed by natural oxidation of the silicon cladding layer are grown on the germanium layer as an outer shell, and the germanium layer and the silicon cladding layer realize the preparation of the nanowire germanium core.

[0074] In this example, please refer to figure 1 , is the side view of the substrate structure, and the su...

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Abstract

The invention discloses a device for coupling a microwave resonance cavity with self-organization germanium-silicon nanowire quantum dots. The device comprises a substrate structure, two or more self-organization germanium-silicon nanowire quantum dot electrode structures and a superconduction microwave resonance cavity structure, wherein the self-organization germanium-silicon nanowire quantum dot electrode structures are prepared on the substrate structure; the superconduction microwave resonance cavity structure is arranged on the substrate structure and coupled with the self-organization germanium-silicon nanowire quantum dot electrode structures. According to the device for coupling the microwave resonance cavity with self-organization germanium-silicon nanowire quantum dots, microwaves of the superconduction microwave resonance cavity are used as media, the multiple quantum dots can be coupled together and can be used as a quantum data bus for expansion and integration of a quantum chip, and a design through and a technical scheme are provided for constructing an expandable quantum chip with coupling of multiple quantum bit long ranges for a quantum computer.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a microwave resonant cavity coupling self-organized germanium silicon nanowire quantum dot device. Background technique [0002] With the continuous development of the semiconductor industry, the scale of chips continues to shrink, and semiconductor chips have entered the nanometer level. Quantum effects have become a factor that cannot be ignored, affecting the accuracy and stability of chip operations, and derived quantum chips. At present, scientists have prepared quantum dot-based single nanowires on various semiconductor material systems such as gallium arsenide, silicon, germanium-silicon core-shell nanowires, indium arsenic nanowires, graphene, carbon nanotubes, and indium antimony nanowires. Qubit, the basic unit of a quantum chip. [0003] Self-organized germanium-silicon nanowires grown on non-doped silicon substrates by molecular epitaxial growth technology are a new typ...

Claims

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Application Information

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IPC IPC(8): H01L29/775H01L21/336B82Y10/00H01P7/06
CPCH01L29/66431H01L29/775H01P7/065B82Y10/00
Inventor 李海欧李炎胡蕾琪刘赫郭光灿郭国平
Owner UNIV OF SCI & TECH OF CHINA
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