YMCO film with high grain boundary resistance and preparation method of YMCO film
A thin film and grain boundary technology, applied in liquid chemical plating, metal material coating process, coating, etc., can solve problems such as grain boundary defects, oxygen vacancy concentration changes, crystal structure instability, etc., and achieve convenient preparation methods Concise, molecular level homogenization effect
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[0031] The YMn 1-y Cr y o 3 The preparation method of film, the steps are as follows:
[0032] Step 1: The molar ratio is 1:(1-y):y will be Y(NO 3 ) 3 ·6H 2 O, C 4 h 6 MnO 4 4H 2 O and Cr(NO 3 ) 3 9H 2O is dissolved in ethylene glycol methyl ether, after stirring evenly, add acetic anhydride and continue stirring until uniformly to obtain a precursor solution;
[0033] Step 2: Spin-coat the precursor solution on the Si substrate to obtain a wet film, bake the wet film at 170-190°C to obtain a dry film, and then rapidly anneal at 400-500°C to obtain a crystalline film;
[0034] Step 3: The crystalline YMn 1-y Cr y o 3 Thin film is cooled to room temperature, repeats step 2, promptly obtains the YMn of desired thickness 1- y Cr y o 3 thin film, and then annealed at 700-900°C to obtain YMn 1-y Cr y o 3 film.
[0035] In described step 1, the volume ratio of ethylene glycol methyl ether and acetic anhydride is (2.5~3):1;
[0036] In the step 2, the speed of...
Embodiment 1
[0041] 1) Set Y(NO 3 ) 3 ·6H 2 O, C 4 h 6 MnO 4 4H 2 O and Cr(NO 3 ) 3 9H 2 O was dissolved in ethylene glycol methyl ether at a molar ratio of 1:0.9:0.1, stirred for 1 h, then added with acetic anhydride and stirred for 1.5 h to obtain stable YMn 0.9 Cr 0.1 o 3 Precursor; Among them, YMn 0.9 Cr 0.1 o 3 The volume ratio of ethylene glycol methyl ether and acetic anhydride in the precursor solution is 3:1;
[0042] 2) Let the precursor solution stand for 24 hours, and spin-coat YMn on the Si substrate by the spin-coating method. 0.9 Cr 0.1 o 3 The wet film was prepared from the precursor solution, and the wet film was uniformly glued at 3000r / min for 20s, and then the wet film was baked at 180°C for 5min to obtain a dry film, and then the dry film was quickly annealed at 450°C for 15min, then cooled to room temperature, and then Repeat the spin-coating-fast process in step 2) until the desired thickness of crystalline YMn is produced 0.9 Cr 0.1 o 3 thin film...
Embodiment 2
[0044] 1) Set Y(NO 3 ) 3 ·6H 2 O, C 4 h 6 MnO 4 · 4 h 2 O and Cr(NO 3 ) 3 9H 2 O was dissolved in ethylene glycol methyl ether at a molar ratio of 1:0.8:0.2, stirred for 1 h, then added with acetic anhydride and stirred for 1.5 h to obtain stable YMn 0.8 Cr 0.2 o 3 Precursor; Among them, YMn 0.8 Cr 0.2 o 3 The volume ratio of ethylene glycol methyl ether and acetic anhydride in the precursor solution is 3:1;
[0045] 2) Let the precursor solution stand for 24 hours, and spin-coat YMn on the Si substrate by the spin-coating method. 0.8 Cr 0.2 o 3 The wet film was prepared from the precursor solution, and the wet film was uniformly glued at 3000r / min for 20s, and then the wet film was baked at 180°C for 5min to obtain a dry film, and then the dry film was quickly annealed at 450°C for 15min, then cooled to room temperature, and then Repeat the spin-coating-fast process in step 2) until the desired thickness of crystalline YMn is produced 0.8 Cr 0.2 o 3 thin ...
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