High-electron-mobility transistor and preparation method thereof

Abstract

The invention discloses a high-electron-mobility transistor and a preparation method thereof, which belongs to the technical field of semiconductors. The high-electron-mobility transistor comprises asubstrate, a channel layer, a barrier layer, a source, a drain and a gate, wherein the channel layer and the barrier layer are sequentially laminated on the substrate, the source, the drain and the gate are arranged on the barrier layer respectively, both the source and the drain form an ohmic contact with the barrier layer, and the gate and the barrier layer forms a Schottky contact; and the channel layer comprises a first sub-layer and a second sub-layer inserted into the first sub-layer, the first sub-layer is an undoped GaN layer, and the second sub-layer is an Au / Ag nanoparticle layer. Through inserting the Au / Ag nanoparticle layer into the undoped GaN layer, the formation of a two-dimensional electronic gas with high concentration and high mobility at a heterojunction interface of the channel layer (GaN) and the barrier layer (AlGaN) is facilitated.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a high electron mobility transistor. Background technique [0002] A high electron mobility transistor (English: High electron mobility transistor, HEMT for short) is a type of field effect transistor, which uses two materials with different energy gaps to form a heterojunction to provide a channel for carriers. Gallium nitride (GaN)-based materials have the characteristics of wide band gap, high electron mobility, high voltage resistance, radiation resistance, easy formation of heterostructures, and large spontaneous polarization effect, and are suitable for the preparation of new generation high-frequency high-power microelectronic devices such as HEMTs and circuits. At present, GaN-based materials and devices are the frontier and hotspot in the global semiconductor field, and have great application prospects in the military and civilian fields. [0003] Existing high ...

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Problems solved by technology

[0006] The embodiment of the present invention provides a high electron mobility transistor and its preparation method, which can solve the problem that the high concentration of electrons in the channel layer in the prior art affects the heterogeneity of the channel layer (GaN) and the barrier layer (AlGaN) The problem of forming a high-concentration, high-mobility two-dimensional electron gas at the junction interface

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