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Active matrix substrate and method for manufacturing same

An active matrix and manufacturing method technology, applied in semiconductor/solid-state device manufacturing, light source, electric light source, etc., can solve problems such as difficult characteristics, and achieve the effect of suppressing the reduction of mass production and TFT characteristics

Inactive Publication Date: 2019-04-19
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, regardless of whether a polysilicon film or an oxide semiconductor film is used, it is difficult to sufficiently satisfy the characteristics required for both pixel TFTs and circuit TFTs.

Method used

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  • Active matrix substrate and method for manufacturing same
  • Active matrix substrate and method for manufacturing same
  • Active matrix substrate and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0035] figure 1 (a) shows a schematic cross-sectional view of an active matrix substrate 100 (hereinafter referred to as "TFT substrate 100") according to the first embodiment of the present invention, figure 1 (b) shows a schematic plan view of a pixel region of the TFT substrate 100 . in addition, figure 2 A schematic top view of the entire TFT substrate 100 is shown.

[0036] Such as figure 2 As shown, the TFT substrate 100 has: a display area 102 including a plurality of pixels; and an area other than the display area 102 (non-display area). The non-display area includes a drive circuit formation area 101 where a drive circuit is provided. For example, a gate driver circuit 140 , a source driver circuit 150 , and an inspection circuit 170 are provided in the driver circuit formation region 101 .

[0037] A plurality of gate bus lines (not shown) extending in the row direction and a plurality of source bus lines S extending in the column direction are formed in the d...

no. 2 Embodiment approach

[0082] refer to image 3 (a) and image 3 (b) describes the structure of the TFT substrate 200 according to the second embodiment of the present invention. The structure of the second TFT 30B for pixels of the TFT substrate 200 is different from that of the TFT substrate 100 of the first embodiment. The other structures are the same as those of the TFT substrate 100, and thus descriptions thereof are omitted. In addition, the TFT substrate 200 can be easily manufactured only by changing the manufacturing method of the TFT substrate 100 .

[0083] image 3 (a) shows a schematic cross-sectional view of the second TFT 30B for pixels of the TFT substrate 200, image 3 (b) shows a schematic plan view of the pixel region of the TFT substrate 200 .

[0084] The TFT substrate 200 includes a substrate 32 and a second TFT 30B formed in a display region 202 on the substrate 32 . The driving circuit formation area (not shown) on the substrate 32 has figure 1 The first TFT10A is sh...

no. 3 Embodiment approach

[0088] Figure 4 (a) shows a schematic cross-sectional view of the second TFT 50B for a pixel of the TFT substrate 300, Figure 4 (b) shows a schematic plan view of a pixel region of the TFT substrate 300 .

[0089] The TFT substrate 300 includes a substrate 52 and a second TFT 50B formed in a display region 302 on the substrate 52 . The driver circuit forming region (not shown) on the substrate 52 has figure 1 The first TFT10A is shown.

[0090] The second TFT 50B is a bottom-gate TFT, and includes: a gate electrode 55B; a second insulating layer 36 covering the gate electrode 55B; and an oxide semiconductor layer 57 disposed on the second insulating layer 56 . Here, the gate electrode 55B is provided on the silicon semiconductor layer 53B formed on the substrate 52 and the first insulating layer 54 covering the silicon semiconductor layer 53B. Like the TFT substrate 100, the silicon semiconductor layer 53B is formed on the same level as the crystalline silicon semicondu...

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Abstract

An active matrix substrate (100) has the following: a substrate (12); a first thin film transistor (10A) that is supported on the substrate (12) and that has a first semiconductor layer (13A) containing crystalline silicon; a second thin film transistor (10B) that is supported on the substrate (12) and that has a second semiconductor layer (17) containing an oxide semiconductor; and a third semiconductor layer (13B) containing silicon, which is disposed on the substrate (12) side of the second semiconductor layer (17) of the second thin film transistor (10B), with a first insulating layer (14)interposed between the third semiconductor layer and the second semiconductor layer.

Description

technical field [0001] The present invention relates to an active matrix substrate and a manufacturing method thereof, in particular to an active matrix substrate suitable for active matrix display devices such as liquid crystal display devices and organic EL display devices and a manufacturing method thereof. Background technique [0002] The active matrix substrate of the display device includes, for example, a thin film transistor (Thin Film Transistor; hereinafter referred to as “TFT”) as a switching element for each pixel. In this specification, such a TFT is referred to as a "pixel TFT". Conventionally, as the pixel TFT, an amorphous silicon TFT having an amorphous silicon film as a semiconductor layer and a crystalline silicon TFT having a crystalline silicon film such as a polysilicon film as a semiconductor layer have been widely used. [0003] A part or the whole of the peripheral driver circuit may also be integrally formed on the same substrate as the pixel TFT....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786G02F1/1368G09F9/30H01L21/336H01L27/32H01L51/50H05B33/28
CPCG02F1/1368G09F9/30H01L29/786H05B33/28H01L27/1225H01L29/7869H01L27/1251H01L29/78696H10K50/00H10K59/00G02F1/134363G02F1/136209H01L27/1274
Inventor 冈田训明
Owner SHARP KK
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