GaN-based light emitting diode epitaxial wafer and preparation method thereof
A light-emitting diode, gallium nitride-based technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems affecting the uniformity and consistency of epitaxial wafers, and achieve improved warpage, consistency, and uniformity. The effect of consistency
Active Publication Date: 2019-04-23
HC SEMITEK ZHEJIANG CO LTD
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[0035] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0036] An embodiment of the present invention provides a GaN-based light-emitting diode epitaxial wafer. figure 1 A schematic structural diagram of a gallium nitride-based light-emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the GaN-based light-emitting diode epitaxial wafer includes a substrate 10 , a buffer layer 20 , graphene powder 30 , a first boron hydride layer 40 , an N-type semiconductor layer 50 , an active layer 60 and a P-type semiconductor layer 70 .
[0037] In this embodiment, the buffer layer 20 is laid on the substrate 10, the graphene powder 30 is spread on the buffer layer 20, and the first boron hydride layer 40 is laid on the graphene powder 30 and the buffer laye...
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The invention discloses a GaN-based light emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. The GaN-based light emitting diode epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer; and the buffer layer, the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate. The GaN-based light emitting diode epitaxial wafer further comprises a graphene powder and a first boron hydride layer,the graphene powder is laid on the buffer layer, and the first boron hydride layer is laid on the graphene powder and the buffer layer exposed from the graphene powder. The layer of graphene powder islaid on the buffer layer, the boron hydride layer is laid on the graphene powder and the buffer layer exposed from the graphene powder, the heat conductivity of the graphene is good, and the thermalconductivity of the boron hydride is not bad and can rapidly transfer the heat of the epitaxial growth so as to improve the uniformity and the consistency of the epitaxial wafer.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Gallium nitride (GaN) has good thermal conductivity, and has excellent characteristics such as high temperature resistance, acid and alkali resistance, and high hardness, so that gallium nitride (GaN)-based LEDs have received more and more attention and research. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the buffer layer, the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentiall...
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IPC IPC(8): H01L33/12H01L33/00
CPCH01L33/0066H01L33/0075H01L33/12
Inventor 郭炳磊刘旺平曹阳王群葛永晖李鹏
Owner HC SEMITEK ZHEJIANG CO LTD