Hydrogen reduction unit

A charging area and reaction technology, applied in the field of high-purity arsenic preparation, can solve the problems of low reduction conversion rate, low single output of hydrogenation reduction device, long production cycle, etc.

Active Publication Date: 2020-10-27
FIRST SEMICON MATERIALS
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Problems solved by technology

There are many preparation methods for high-purity arsenic, among which the hydrogenation reduction method is a common method for producing high-purity arsenic, please refer to a hydrogenation reduction device for high-purity arsenic production and a high-purity arsenic preparation method proposed in Chinese patent application CN201510425035.4 , but the hydrogenation reduction device used in this technical solution still has technical problems such as low output per unit, long production cycle, and low reduction conversion rate.

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Embodiment Construction

[0017] The technical solution will be clearly and completely described below in conjunction with the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0018] see figure 1 , the present invention proposes a hydrogenation reduction device 100, the hydrogenation reduction device 100 includes a reaction quartz tube 110 placed horizontally, a heating jacket 120 for heating the reaction quartz tube 110, an evaporator 130, and an air inlet pipe 140, The reaction quartz tube 110 includes a reaction section 111 and a deposition section 112, the reaction section 111 includes a charging area 111a and a buffer zone 111b, the buffer zone 111b is adjacent to the deposition section ...

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Abstract

The invention relates to a hydrogenation reduction device. The hydrogenation reduction device comprises a reaction quartz tube horizontally arranged, a heating sleeve for heating the reaction quartz tube, an evaporation kettle, and an air inlet pipe; the reaction quartz tube comprises a reaction section and a deposition section; the reaction section comprises a charging area and a buffer area; thebuffer area is adjacent to the deposition section; the heating sleeve comprises a first heating area, a second heating area and a third heating area; the first heating area, the second heating area and the third heating area correspondingly cover the charging area, the buffer area and the deposition section; a reduction pipe is fixed in the charging area; one end of the air inlet pipe is insertedinto the reduction pipe; the other end of the air inlet pipe is bifurcated into a first branch pipe and a second branch pipe; the first branch pipe communicates with the evaporation kettle; and the second branch pipe communicates with a hydrogen air inlet and a nitrogen air inlet. The hydrogenation reduction device is high in single-furnace capacity, high in reaction conversion rate and simple tooperate.

Description

technical field [0001] The invention relates to the field of high-purity arsenic preparation, in particular to a hydrogenation reduction device for preparing high-purity arsenic by using arsenic trichloride. Background technique [0002] High-purity arsenic is the main raw material for the synthesis of semiconductor compounds such as gallium arsenide, indium arsenide, and arsenic selenide. These semiconductor compounds are widely used in integrated circuits, photovoltaic solar power generation, Hall elements and other fields. In recent years, with the development of high-tech industries, the application fields of high-purity arsenic have become increasingly extensive, and the demand is increasing. There are many preparation methods for high-purity arsenic, among which the hydrogenation reduction method is a common method for producing high-purity arsenic, please refer to a hydrogenation reduction device for high-purity arsenic production and a high-purity arsenic preparatio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22B30/04
CPCC22B30/04
Inventor 刘留曾小东郭金伯陈昭龙周声万
Owner FIRST SEMICON MATERIALS
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