Crystal growth furnace and crystallization system

Abstract

The invention provides a crystal growth furnace and a crystallization system, and relates to the field of furnace structures. The crystal growth furnace comprises a furnace body, a first crucible, a point heat source, a bottom heat insulation structure and heaters; the first crucible is arranged in the furnace body; the heaters are arranged outside the first crucible; the point heat source is arranged at the bottom center of the first crucible; and the bottom heat insulation structure sleeves the point heat source. The point heat source realizes concentrated heating of the center of the firstcrucible in order to ensure that a temperature difference between the center of a monocrystalline silicon rod and molten polycrystalline silicon is consistent with a temperature difference between thesurface of the monocrystalline silicon rod and molten polycrystalline silicon, so the crystallization speeds of the center and the surface of the monocrystalline silicon rod are the same, and the quality of the monocrystalline silicon rod is ensured.

Description

technical field [0001] The present application relates to the technical field of furnace structure, in particular to a crystal growth furnace and a crystallization system. Background technique [0002] As an important raw material for semiconductors, monocrystalline silicon is widely used in the semiconductor industry. With the development of semiconductor material technology, higher requirements are put forward for the quality of single crystal silicon. [0003] During the preparation process of single crystal silicon, it is necessary to pull the crystal, that is, to carry out crystal growth on the single crystal silicon in a molten state, so as to obtain a single crystal silicon rod. In the process of crystal pulling, because the heat transfer rate in the center of the silicon rod at the crystallization point is slower than that on the surface, the temperature in the center of the silicon rod is higher than that on the surface, so the temperature difference between the ce...

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Problems solved by technology

[0005] The purpose of this application is to provide a crystal growth furnace and a crystallization system in view of the deficiencies in the above-mentioned prior art, so as to solve the problem that the crystallization speed of each part of the single crystal silicon rod crystallization is inconsistent during the crystal growth process, resulting in the crystallization of the single crystal silicon rod low quality problem

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