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Overlay offset measurement compensation method and device and storage medium

A compensation method and a technology of a compensation device, which are applied in the direction of exposure devices, optics, instruments, etc. of photolithography, can solve the problems of increasing the production cycle and cost of semiconductor devices, and achieve the effects of shortening the production cycle and reducing production costs

Active Publication Date: 2019-04-30
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This measurement method requires additional measurement equipment and requires sampling measurements to which sampled wafers need to be moved, thus increasing the production cycle and cost of semiconductor devices

Method used

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  • Overlay offset measurement compensation method and device and storage medium
  • Overlay offset measurement compensation method and device and storage medium
  • Overlay offset measurement compensation method and device and storage medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] Such as image 3 As shown, the method for measuring the overlay offset of the present embodiment includes:

[0056] Step S101, obtaining the first parameter and the second parameter of the exposure unit 11, wherein the first parameter includes the Z-axis value of the exposure unit 11 and the second parameter, and the second parameter includes the X-axis value of the exposure unit, that is, the first parameter includes The coordinate value (x, z), the second parameter includes the coordinate value (x), the first parameter (x, z) and the second parameter (x) can be obtained by measuring on the exposure machine 20;

[0057] Step S102, calculating the first overlay offset of the exposure unit 11, wherein the first overlay offset includes an overlay offset OVX1 on the X axis, and the calculation is based on the first parameter (x, z) , that is, using the Z-axis value of the exposure unit 11 to obtain the overlay offset on the X-axis;

[0058] Step S103, measuring a second ...

Embodiment 2

[0079] Such as Image 6 As shown, the method for measuring the overlay offset of the present embodiment includes:

[0080] Step S201, obtaining the first parameter (x, y, z) and the second parameter (x, y) of the exposure unit 11;

[0081] Step S202, calculating the first overlay offset OVX1 on the X-axis and the first overlay offset OVY1 on the Y-axis of the exposure unit 11, that is, converting the Z-axis value of the exposure unit 11 into the X-axis and Y-axis Overlay offset on ;

[0082] Step S203, measuring the second overlay offset OVX2 of the exposure sheet 11 on the X-axis and the second overlay offset OVX2 on the Y-axis;

[0083] Step S204, obtaining the first correlation coefficient r1 of the first overlay offset OVX1 on the X-axis and the second overlay offset OVX2 on the X-axis, and the first overlay offset on the Y-axis The second correlation coefficient r2 of the quantity OVY1 and the second overlay offset OVX2 on the Y axis;

[0084] Step 205, calculating th...

Embodiment 3

[0107] An embodiment of the present invention provides a device for measuring and compensating an overlay offset. The following describes the device for measuring and compensating an overlay offset according to various embodiments of the present invention with reference to the accompanying drawings. The foregoing description of the method can be used to understand the overlay offset measuring and compensating device in various embodiments of the present invention.

[0108] Figure 8 A schematic block diagram of an apparatus for measuring and compensating an overlay offset according to an embodiment of the present invention is shown. Such as Figure 8 As shown, according to an embodiment of the present invention, the overlay offset measurement compensation device includes a parameter acquisition unit 41, a first overlay offset calculation unit 42, a second overlay offset measurement unit 43, a correlation The coefficient obtaining unit 44 and the third overlay offset calculat...

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Abstract

The invention provides at least one overlay offset measurement compensation method. The method includes the following steps: obtaining a first parameter and a second parameter of a shot unit; calculating first overlay offset of the shot unit based on the first parameter; calculating second overlay offset of the shot unit based on the second parameter; obtaining a correlation coefficient of the first overlay offset and the second overlay offset; and calculating third overlay offset of the shot unit, wherein the third overlay offset is the first overlay offset multiplied by the correlation coefficient. The overlay offset measurement compensation method of the embodiments of the invention can be directly applied to an exposure machine for CPE measurement. The measurement time is short, and sothe CPE measurement frequency can be increased, the overlay accuracy can be improved, the product production cycle can be shortened, the yield can be improved, and the production cost can be reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method, device and storage medium for measuring and compensating stacking offsets of semiconductors in a photolithography process. Background technique [0002] The photolithography process is used in the semiconductor manufacturing process. The photolithography process is to transfer the circuit structure in the form of a pattern on the mask (Mask) to the surface of the wafer coated with photoresist through steps such as alignment, exposure, and development, so that A layer of photoresist masking pattern is formed on the circular surface. [0003] Semiconductor devices are made up of many overlapping layers of circuits, so dozens of photolithography steps are required. It is necessary to ensure that each layer is aligned with the front and rear layers, that is, overlay. Overlay errors will directly affect the quality of semiconductor devices. performance, or even ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/70775G03F7/7085
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC