Simple anisotropic thin-film magneto-resistive sensor
A magnetoresistive sensor and anisotropic magnetic technology, applied in the field of magnetic sensors, can solve the problems of single structure, single magnetic sensor structure, insensitive to small magnetic field angle changes, etc., and achieve simple structure, small magnetic field angle changes, and convenient implementation. Effect
Active Publication Date: 2019-05-14
SOUTHEAST UNIV
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Problems solved by technology
The magnetoresistive sensor made by using the ARM magnetoresistance effect is a kind of magnetic sensor widely used by people. However, the magnetic sensor on the market has a single structure and is not sensitive to small magnetic field angle changes. Therefore, a simple and high-sensitivity new structure is developed. It is the direction that people urgently need to study
[0004] The most important thing about the thin film magnetoresistive sensor is the sensitivity to the magnetic field and the arrangement structure of the magnetoresistive film. However, the traditional thin film magnetoresistive sensor has a single structure and is insensitive to small changes in the magnetic field angle. Therefore, a new type of simple magnetoresistive film arrangement is sought. Structure and improving sensitivity are our goals, and the present invention has designed a novel thin film magnetoresistive sensor with simple structure and high sensitivity
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[0019] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0020] Such as Figure 1 to Figure 3 As shown, the simple anisotropic thin film magnetoresistive sensor of the present invention includes a substrate 1, an insulating layer 2, an anisotropic magnetoresistive layer 3 and a top layer electrode layer 4 that are stacked sequentially from bottom to top; wherein, the anisotropic magnetoresistive Layer 3 is formed by connecting two identical anisotropic first magnetoresistive film strips A and second magnetoresistive film strips B, the shape of the first magnetoresistive film strip A or the second magnetoresistive film strip B is Continuous S shape.
[0021] The first magnetoresistive film strip A and the second magnetoresistive film strip B are made of iron-nickel alloy, and the content of iron in the iron-nickel alloy is 20%. The material of the insulating layer 2 is SiO 2 , has the advantages...
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The invention discloses a simple anisotropic thin-film magneto-resistive sensor. The thin-film magneto-resistive sensor is formed by connecting two completely same anisotropic first magneto-resistivethin-film strip (A) and second magneto-resistive thin-film strip (B), the phase difference between the first magneto-resistive thin-film strip (A) and the second magneto-resistive thin-film strip (B)is 45 DEG; the shape of the first magneto-resistive thin-film strip (A) or the second magneto-resistive thin-film strip (B) is a continuous S shape. The simple anisotropic thin-film magneto-resistivesensor disclosed by the invention is simple in structure and convenient for implementation; since two magneto-resistive thin-films are placed in an angle of 45 DEG, the detection is more sensitive, and the small magnetic field angle change can be detected.
Description
technical field [0001] The invention belongs to the technical field of magnetic sensors, and in particular relates to a simple and novel anisotropic thin-film magnetoresistive sensor for measuring the direction of a magnetic field. Background technique [0002] An important basis for the rapid development of information technology is the continuous advancement of sensor technology. As a physical quantity closely related to human life, the magnetic field has attracted much attention from its detection and application systems. As an important branch of the magnetoelectric effect, the magnetoresistance effect is the research hotspot in this field. The research on a series of magnetoelectric effects such as the anisotropic magnetoresistance effect, the giant magnetoresistance effect, and the tunnel magnetoresistance effect has been widely recognized by generations of scientists. With the efforts of , it promotes and guides the development of information technology, and the resea...
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IPC IPC(8): G01R33/09
Inventor 陈洁黄旭庭
Owner SOUTHEAST UNIV