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Bidirectional transient voltage suppressor and manufacture method thereof

A technology of transient voltage suppression and manufacturing method, applied in the direction of electric solid device, semiconductor/solid state device manufacturing, circuit, etc. The effect of breakdown voltage capability

Inactive Publication Date: 2019-05-17
泉州臻美智能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Currently commonly used trench transient voltage suppressors can only achieve unidirectional protection. If bidirectional protection is required, multiple transient voltage suppressors need to be connected in series or in parallel, which increases the device area and manufacturing cost.

Method used

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  • Bidirectional transient voltage suppressor and manufacture method thereof
  • Bidirectional transient voltage suppressor and manufacture method thereof
  • Bidirectional transient voltage suppressor and manufacture method thereof

Examples

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Embodiment Construction

[0045] The invention will be described in more detail below with reference to the accompanying drawings. In the various figures, the same elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0046] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0047] If the purpose is to describe the situation directly on another layer or another a...

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PUM

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Abstract

The invention provides a bidirectional transient voltage suppressor and a manufacture method thereof. The manufacture method comprises steps of providing a substrate of a second conductive type, etching the substrate so as to form a ditch, forming a second epitaxial layer and a third epitaxial layer of the second conductive type on the side wall of the ditch, forming a forth epitaxial layer of a first conductive type on the upper surface of the substrate, forming a fifth epitaxial layer of the first conductive type on the lower surface of the substrate, forming a first metal layer on the uppersurface of the fourth epitaxial layer, and forming a second metal layer on the lower surface of the fifth epitaxial layer. The anti-breakdown voltage capability of the bidirectional transient voltagesuppressor is improved through multiple groups of PN junctions; the bidirectional transient voltage suppressor has a multi-path bidirectional function so as to protect multiple circuits simultaneously in use, and application cost of the power device is lowered. The bidirectional transient voltage suppressor requires etching for only once, so that the manufacture cost is lowered.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a bidirectional transient voltage suppressor and a manufacturing method thereof. Background technique [0002] Electrostatic discharge, as well as other random voltage transients in the form of voltage surges, are commonly found in a variety of electronic devices. As semiconductor devices become increasingly miniaturized, dense, and multifunctional, electronic devices are increasingly susceptible to potentially fatal voltage surges, which can induce transients in everything from electrostatic discharge to lightning current spikes. [0003] Transient voltage suppressor is a solid-state semiconductor device specially designed to protect sensitive semiconductor devices from transient voltage surge damage. It has small clamping coefficient, small size, fast response, small leakage current and High reliability and other advantages, so it has been widely used in voltage transi...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L27/02H01L21/822
Inventor 不公告发明人
Owner 泉州臻美智能科技有限公司
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