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Manufacturing process of ITO conducting film

A manufacturing process and technology of conductive film, applied in the field of ITO, can solve the problems of low resistivity and high transmittance, and achieve the effect of low resistivity, high transmittance and improved service life

Inactive Publication Date: 2019-05-28
安徽晟光科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In view of this situation, a production process of ITO conductive film is proposed. The bonding force between the ITO layer and the resin matrix is ​​strong, and the product has high transmittance and low resistivity.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A kind of ITO conductive film manufacturing process using the following manufacturing steps:

[0035] Step 1: Ultrasonic cleaning is performed on the substrate to remove the oxide layer and stains on the surface of the substrate. The thickness of the substrate is 30 μm to 200 μm, the visible light transmittance of the substrate is above 93%, and the substrate is a resin matrix.

[0036] Step 2: Put the substrate into the loading chamber of the magnetron sputtering equipment, use ions to bombard the transparent film substrate to eliminate static electricity, and vacuumize after sealing.

[0037] Step 3: The resin matrix is ​​heated to 95-100°C and then transported to the sputtering chamber, where it is deposited for the first time by magnetron sputtering. After the first ITO layer is obtained, it is cooled to room temperature.

[0038] Step 4: Polishing the surface of the first ITO layer coating, the surface roughness of the first ITO layer coating is not higher than 2.5...

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PUM

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Abstract

The invention discloses a manufacturing process of an ITO conducting film. The manufacturing process includes the following manufacturing steps that 1, a base material is ultrasonically cleaned, and an oxide layer and dirt on the surface of the base material are removed; 2, the base material is put in a loading chamber of magnetron sputtering equipment, the transparent film base material is subjected to ion bombardment so that static can be removed, and vacuumizing is carried out after sealing is completed; 3, a resin matrix is heated to 95-100 DEG C and then conveyed to a sputtering chamber,first-time deposition is carried out in a magnetron sputtering manner, and after a first ITO layer is obtained, the base material is cooled to room temperature; 4, the coating surface of the first ITOlayer is polished; 5, the base material in which the first ITO layer is deposited is heated to 95-100 DEG C, second-time deposition is carried out in a magnetron sputtering manner, and after a secondITO layer is obtained, the base material is conveyed to a cooling chamber to be cooled to room temperature; 6, the cooled base material is put in an unloading chamber and unloaded, and an ITO conducting film is obtained; and 7, the ITO conducting film is annealed at the annealing temperature of 90-110 DEG C for 20 min, and the ITO conducting film is obtained.

Description

technical field [0001] The invention relates to the field of ITO, in particular to a manufacturing process of an ITO conductive film. Background technique [0002] ITO conductive film refers to the use of magnetron sputtering to sputter a transparent indium tin oxide (ITO) conductive film coating on a transparent organic film material and obtain a product after high-temperature annealing. The thickness of the ITO film layer is different, and the conductivity and light transmission properties of the film are also different. In recent years, with the rapid development of semiconductor manufacturing technology, new devices such as photovoltaic cells, flat panel displays, LED lighting, touch screens, etc. have been developed rapidly and widely used in our daily life. These new devices all use transparent conductive films as electrodes on the light-receiving surface or light-emitting surface. Among the conventional transparent conductive films, the ITO (indium tin oxide mixture...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35C23C14/02C23C14/58
Inventor 肖新煌张磊
Owner 安徽晟光科技有限公司