Read auxiliary circuit and method for improving read stability of sense amplifier in DRAM and sense amplifier

A technology of sensitive amplifiers and reading auxiliary circuits, which is applied in the field of sensitive amplifiers, can solve problems such as changes in storage units of sensitive amplifiers, and achieve the effect of increasing the ability to resist coupling effects

Pending Publication Date: 2019-05-28
XI AN UNIIC SEMICON CO LTD
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If VCSL is too high, the capacitive coupling effect and the charge sharing effect will be enhanced, and in severe cases, the sense amplifier will be flipped and the value of the memory cell will be changed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Read auxiliary circuit and method for improving read stability of sense amplifier in DRAM and sense amplifier
  • Read auxiliary circuit and method for improving read stability of sense amplifier in DRAM and sense amplifier
  • Read auxiliary circuit and method for improving read stability of sense amplifier in DRAM and sense amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention will be further described below in conjunction with accompanying drawing.

[0024] Such as Figure 4 As shown, the auxiliary circuit of the present invention includes an NMOS transistor N6, the source terminal of the NMOS transistor N6 is connected to the negative voltage VNWL, the gate terminal is connected to the control signal NSET2, and the drain terminal is connected to the NMOS transistor N2 in the traditional sense amplifier at the same time (N2 is the low voltage of the sense amplifier drain end of the pull-down tube) and NCS.

[0025] The mode that the present invention improves sense amplifier to read stability has following two kinds:

[0026] the first method:

[0027] Such as Figure 4 shown in figure 1 Add the read auxiliary circuit of the present invention in the sensitive amplifier circuit shown, that is, increase the NMOS transistor N6, make the gate of N6 connect to NSET2, during the CSL pulse, turn off the N2 transistor conne...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

In order to improve the reading stability of a sensitive amplifier, the invention provides a reading auxiliary circuit method for improving the reading stability of the sensitive amplifier and the sensitive amplifier. Wherein the reading auxiliary circuit comprises an NMOS tube N6, the source end of the NMOS tube N6 is connected with negative voltage VNWL, the gate end of the NMOS tube N6 is connected with a control signal NSET2, and the drain end of the NMOS tube N6 is used for being connected with the drain end of a low-voltage pull-down tube N2 in the sensitive amplifier. In the CSL pulse period, firstly, the NOMS tube N2 is turned off, and the NMOS tube N6 is turned on, so that the NCS and the BL _ N are charged to a negative voltage VNWL; then, an NMOS tube N4 connected with the SAP1Tin the sensitive amplifier is opened; According to the invention, the NMOS tube N5 connected with the SAP2T in the sensitive amplifier is turned off, so that the PCS and the BL are charged to the VOD, the voltage difference between the BL and the BL _ N is further increased, and the capacity of the sensitive amplifier for resisting the coupling effect is improved.

Description

technical field [0001] The invention belongs to the technical field of memory, and relates to a reading auxiliary circuit and a method for improving the reading stability of a sense amplifier in a DRAM and a sense amplifier using the reading auxiliary circuit. Background technique [0002] Such as figure 1 , 2 As shown in , 3, when the traditional sense amplifier is in the ACTIVE (activated) state, when SAP1T is low, SAP2T becomes high voltage, at this time N4 is closed, N5 is turned on, PCS remains at VBLH, thus the high voltage bit line also remains at VBLH. [0003] NSET is high, NCS is pulled down to ground so that the low voltage bit line remains at ground. [0004] When the DRAM reads, CSL becomes high, and N2 and N3 are turned on. On the one hand, due to the capacitive coupling between CSL and the bit line, the voltage of the low-voltage bit line will increase. On the other hand, because MDQ / MDQ_N is read before It is pre-charged to VINT, so when N2 and N3 are tur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/08G11C16/26
Inventor 熊保玉段会福张颖
Owner XI AN UNIIC SEMICON CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap