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Suspended green-light LED monolithic integrated device and preparation method thereof

A monolithic integration, green light technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem of low luminous efficiency, achieve the effect of improving luminous efficiency, inhibiting diffusion, and wide application prospects

Active Publication Date: 2019-05-31
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a suspended green LED monolithic integrated device and a preparation method thereof, which are used to solve the problem of low luminous efficiency of existing green LED devices

Method used

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  • Suspended green-light LED monolithic integrated device and preparation method thereof
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  • Suspended green-light LED monolithic integrated device and preparation method thereof

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Embodiment Construction

[0031] The specific implementation of the suspended green LED monolithic integrated device and its preparation method provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0032] This specific embodiment provides a monolithic integrated device of suspended green light LED, with figure 1 It is a schematic cross-sectional structure diagram of a suspended green LED monolithic integrated device in a specific embodiment of the present invention, with figure 2 It is a top view structure schematic diagram of a suspended green LED monolithic integrated device in a specific embodiment of the present invention.

[0033] Such as figure 1 , figure 2 As shown, the suspended green LED monolithic integrated device provided in this specific embodiment includes a substrate 10, an AlN buffer layer 11 located on the surface of the substrate 10, and at least one device structure located on the surface of the AlN buffer layer 11 ;...

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Abstract

The invention relates to the field of illumination, display and optical communication and in particular to a suspended green-light LED monolithic integrated device and a preparation method thereof. The suspended green-light LED monolithic integrated device includes a substrate, an AlN buffer layer on the surface of the substrate, and at least one device structure on the surface of the AlN buffer layer. The device structure includes an AlN buffer layer, an N-type GaN layer, an InGaN / GaN superlattice preparation layer, a multi-quantum well layer, a P-type AlGaN layer, a first P-type GaN layer, aP-type AlGaN / InGaN superlattice layer, and a second P-type GaN layer which are successively stacked in a direction vertical to the substrate. The substrate has a cavity extending through the substrate. The device structure is suspended above the cavity. The suspended green-light LED monolithic integrated device improves the light-emitting efficiency of an light-emitting diode, and has broad application prospects in the field of illumination, display and optical communication.

Description

technical field [0001] The invention relates to the fields of illumination, display and optical communication, in particular to a suspended green light LED monolithic integrated device and a preparation method thereof. Background technique [0002] Gallium nitride materials among III-V materials have properties such as wide direct band gap, strong atomic bond, high thermal conductivity, good chemical stability and strong radiation resistance. They are used in optoelectronics, high-temperature and high-power devices and The application of high-frequency microwave devices has broad prospects. By changing the dopant and doping concentration in the gallium nitride quantum well, LED (Light Emitting Diode, light-emitting diode) devices with different wavelengths can be prepared, which avoids many disadvantages of traditional light-emitting diodes using phosphors, and is widely used in Lighting, display and optical communication fields. [0003] However, in the range of luminous ...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/20H01L33/32H01L33/00
Inventor 王永进袁佳磊
Owner NANJING UNIV OF POSTS & TELECOMM
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