Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor structure and formation method thereof

A semiconductor and bonding technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as poor performance of transistors, achieve good interface states, improve service life, and reduce instability.

Active Publication Date: 2019-06-04
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, existing FinFETs perform poorly

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure and formation method thereof
  • Semiconductor structure and formation method thereof
  • Semiconductor structure and formation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] As mentioned in the background, the performance of the P-type FinFET is poor.

[0033] figure 1 It is a schematic diagram of the structure of a P-type fin field effect transistor.

[0034] Please refer to figure 1 , a substrate 100, the substrate 100 has an insulating layer 101 thereon, and the insulating layer 101 has a fin 102 thereon; an interface layer 103 covering the sidewall and top surface of the fin 102.

[0035] In the above P-type FinFET structure, in order to improve the carrier mobility in the channel region of the P-type FinFET, silicon germanium is used as the material of the fin portion 102 . The carrier mobility is closely related to the concentration of germanium atoms. Specifically, when the atomic percentage concentration of the germanium atoms is less than 25%, the carrier mobility is low, which is not conducive to improving the electrical performance of the P-type fin field effect transistor; on the contrary, when the atomic percentage concentra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a semiconductor structure and a formation method thereof. The method comprises a step of providing a substrate with an initial fin thereon, wherein the initial fin has a first atom and a second atom inside, a step of concentrating the top of the initial fin to forming a fin and a first material layer on the fin, wherein the second atom in the fin has a first atomic percent concentration, the second atom in the first material layer has a second atomic percent concentration, the second atomic percent concentration is larger than the first atomic percent concentration, andthe binding force of the second atom to an oxygen atom is larger than the binding force of the first atom to the oxygen atom, a step of oxidizing a side wall of the fin and a side wall and a top surface of the first material layer to form an interface layer. A transistor formed by the method has stable performance and long service life.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing toward higher component density and higher integration. As the most basic semiconductor device, transistors are currently being widely used. Therefore, as the component density and integration of semiconductor devices increase, the gate size of planar transistors is getting shorter and shorter. The control ability of traditional planar transistors on channel current Weakened, resulting in short channel effect, resulting in leakage current, and ultimately affecting the electrical performance of semiconductor devices. [0003] In order to overcome the short-channel effect of the transistor and suppress the leakage current, a Fin Field Effect Transistor (Fin FET) is proposed in the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78H01L29/165
Inventor 李勇
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com