Novel silicon controlled rectifier

Abstract

The invention discloses a novel silicon controlled rectifier. The novel silicon controlled rectifier comprises a substrate, wherein an N trap and a P trap are arranged on the substrate in the length direction of the substrate; a first P+ injection region and a first N+ injection region are sequentially arranged on the N trap in the width direction of the substrate; a second P+ injection region anda second N+ injection region are sequentially arranged on the P trap in the width direction of the substrate; the first P+ injection region and the second N+ injection region are correspondingly connected with an anode and a cathode, and the first N+ injection region and the second P+ injection region are connected through a metal line; the first P+ injection region, the first N+ injection region, the second P+ injection region and the second N+ injection region are all separated by first isolation grooves; the first P+ injection region and the first N+ injection region are separated from theedge of the N trap by second isolation grooves; and the second P+ injection region and the second N+ injection region are separated from the edge of the P trap by third isolation grooves. The novel silicon controlled rectifier saves the layout area and improves the area efficiency, and the voltage maintenance function of a silicon controlled rectifier structure is improved.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a novel thyristor, in particular to a high-area-efficiency thyristor which is used for electrostatic protection and has high sustain voltage. Background technique [0002] The phenomenon of Electro-Static discharge (ESD) in nature poses a serious threat to the reliability of integrated circuits. In the industry, 37% of the failures of integrated circuit products are caused by electrostatic discharge phenomena. And as the density of integrated circuits increases, on the one hand, due to the thinner and thinner silicon dioxide film (from micron to nanoscale), the electrostatic pressure on the device is getting lower and lower; on the other hand, it is easy to produce 1. Materials that accumulate static electricity are widely used, such as plastics, rubber, etc., which greatly increases the probability of integrated circuits being damaged by electrostatic di...

AI Technical Summary

Problems solved by technology

Although the thyristor has the advantages of high robustness and simple structure, but the thyristor also has the disadvantages of slow turn-on speed, high turn-on voltage, and low maintenance voltage, which cannot protect the gate oxide layer of the MOS transistor at the input and output ends of the integrated circuit. play a very good effect

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