Memory array structure, preparation method thereof, memory, write-in method and read-out method

Abstract

The invention provides a memory array structure, a preparation method thereof, a memory, a write-in method and a read-out method. The array structure comprises at least one memory cell which comprisesa superconducting device and a magnetic memory device which are overlapped and connected in series; at least one superconductive upper electrode which is arranged above the memory unit; at least onesuperconductive lower electrode arranged below the memory unit; at least one superconductive word line arranged above the memory unit or below the memory unit, wherein the superconductive word line isarranged close to the superconductive device in the memory unit. According to the invention, the magnetic memory device is organically combined with the superconducting integrated circuit, and the switching effect of the circuit is realized by using a superconducting device, thereby replacing a CMOS logic circuit. The memory array structure can achieve the operation of the memory at low temperature, guarantees that an MRAM achieves high-speed and high-density storage at a low working voltage, achieves the work based on different writing modes, forms an information reading mode suitable for the superconducting logic process, and is simple in structural design and beneficial to reduction of the etching frequency.

Description

technical field [0001] The invention belongs to the technical field of memory, and in particular relates to a memory array structure and a preparation method, a memory, and a writing method and a reading method. Background technique [0002] As a new type of non-volatile storage technology, Magnetic Random Access Memory (MRAM) has high-speed random read and write, high integration, low write power, good fatigue resistance, considerable economic advantages. Therefore, MRAM is widely used in advanced technology fields such as consumer electronics, artificial intelligence, mechanical automation, Internet of Things and big data, and aerospace. [0003] At present, most of the relatively well-developed MRAMs are combined with CMOS logic circuits, and the working temperature range is generally not lower than room temperature. However, there are very few applications of MRAM at low temperatures. How to find magnetic memory cells that maintain excellent electrical properties at ex...

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a memory array structure and preparation method, a memory and a writing method and a reading method, which are used to solve the problem that the memory in the prior art is difficult to work under extreme low temperature conditions. And problems such as high memory energy consumption and high operating voltage

Images