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Light irradiation device and film forming device

A technology for light irradiation devices and thin films, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve the problems of difficulty in adjusting the composition ratio of thin films and degradation of thin film characteristics.

Pending Publication Date: 2019-06-14
SCREEN HLDG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in addition to the need for a high-vacuum device, the sputtering technique has the following disadvantages: when forming a metal oxide film, oxygen vacancy (oxygen vacancy) occurs and the characteristics of the film are degraded.
In addition, in the sputtering technique, it is also difficult to adjust the composition ratio of the thin film.

Method used

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  • Light irradiation device and film forming device
  • Light irradiation device and film forming device
  • Light irradiation device and film forming device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach ＞

[0050] figure 1 It is a figure which shows the whole arrangement|positioning structure of the thin film forming apparatus of this invention. The thin film forming apparatus 1 of the present invention is an apparatus for forming a thin film containing indium oxide on the surface of a substrate. The substrate to be processed may be a glass substrate or a semiconductor wafer (a rectangular glass substrate in this embodiment). In addition, the shape and size of the substrate to be processed are also not particularly limited, and may be set to an appropriate shape or size. The thin film forming apparatus 1 includes a loader / unloader 20 , a coating processing unit 30 , a heat processing unit 40 , a light irradiation processing unit 50 , and a transfer robot 10 . In the first embodiment, a so-called cluster tool (cluster tool) type in which a loader / unloader 20, a coating processing unit 30, a heat processing unit 40, and a light irradiation processing unit 50 are arranged around a...

no. 2 Embodiment approach ＞

[0078] Next, a second embodiment of the present invention will be described. Figure 5 It is a figure which shows the whole arrangement|positioning structure of the thin film forming apparatus 1a of 2nd Embodiment. The layout of the processing unit of the thin film forming apparatus 1 a of the second embodiment is different from that of the thin film forming apparatus 1 of the first embodiment. The thin film forming apparatus 1 a of the second embodiment includes a loader 21 , a coating processing unit 30 , a light irradiation processing unit 50 , a heat processing unit 40 , an unloader 22 , a first transfer robot 11 , and a second transfer robot 12 . In addition, in Figure 5 In , the same symbols are assigned to the same components as those in the first embodiment.

[0079] In the second embodiment, the loader 21 , the coating processing unit 30 , and the light irradiation processing unit 50 are arranged around the first transfer robot 11 . On the other hand, an unloader ...

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Abstract

The invention provides a Light irradiation device and a film forming device, capable of well inactivating an indium oxide precursor. The light irradiation device irradiates ultraviolet rays to the substrate (W) on which the coating film containing the indium oxide precursor is formed from a plurality of excimer lamps (51). The irradiation interval (d) of a plurality of excimer lamps (51) and the substrate (W) is significantly shorter than the arrangement interval (p) of the plurality of excimer lamps (51). The irradiation interval (d) is 2 mm or more and 10 mm or less. The space between the plurality of excimer lamps (51) and the substrate (W) is set as an atmospheric environment. The substrate (W) is slidably moved relative to the plurality of excimer lamps (51), whereby the ultraviolet ray is uniformly irradiated onto the coating film on the substrate (W) in an atmosphere containing oxygen, so as to enable the indium oxide precursor contained in the coating film to be well opticallyactivated.

Description

technical field [0001] The present invention relates to a light irradiation device for optically activating the indium oxide precursor by irradiating ultraviolet rays to a substrate on which a coating film of a precursor containing indium oxide is formed for use in semiconductors, and thin film formation including the light irradiation device device. Background technique [0002] Typically, a sputtering technique is used when forming a thin film of a metal oxide such as indium oxide. In the sputtering technique, ions such as argon collide with a target in a vacuum chamber, and the ejected particles are deposited on the surface of the substrate to form a thin film. However, the sputtering technique requires a device for generating a high vacuum, and has disadvantages in that when a metal oxide film is formed, oxygen vacancies (oxygen vacancy) occur and the properties of the film decrease. In addition, in the sputtering technique, there is also a problem that it is difficult...

Claims

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Application Information

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IPC IPC(8): H01L21/67H01L21/368
Inventor 柿村崇北村嘉孝
Owner SCREEN HLDG CO LTD
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