Self-input control load modulation type power amplifier and implementation method thereof
A power amplifier and load modulation technology, which is applied in the field of wireless communication, can solve the problems of complex modulation methods and low efficiency, and achieve the effect of increasing the working bandwidth and improving the range of high-efficiency power fallback
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[0030] Such as figure 1 As shown, a method for realizing a self-input-controlled load modulation power amplifier specifically includes the following steps:
[0031] Step 1: According to the selected transistor (such as CGH40010F GaN HEMT) use such as Figure 4 For the DC characteristic scanning curve shown, the drain bias voltage is 28V, and the gate bias voltage is -2.7V so that the transistor is in a linear amplification state. At this time, the conduction angle of the transistor is between π and 2π, which meets the conduction angle requirements of the class AB power amplifier. On the basis of this DC bias, the input and output matching circuit is designed for the transistor. In order to expand the operating bandwidth of the circuit, the matching circuit adopts step impedance matching design. Match the input and output impedance of the transistor to the standard load impedance of 50 ohms, the topology of the power amplifier circuit is as follows figure 2 shown. Select ...
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