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A low power consumption full MOS tube bandgap reference circuit and a converter based on it

A reference circuit and MOS tube technology, applied in the direction of instruments, adjusting electrical variables, control/regulation systems, etc., can solve the problems of complex circuits and high power consumption of circuits, and achieve simplified circuit structure, low power consumption, and low power consumption Effect

Inactive Publication Date: 2020-11-10
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The object of the present invention is: the present invention provides a kind of low power consumption full MOS tube bandgap reference circuit and the converter based on it, solves the problem of constructing zero temperature by the negative temperature characteristics of the emitter-base voltage of the existing BJT tube The bandgap reference has the problems of large circuit power consumption and complicated circuit

Method used

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  • A low power consumption full MOS tube bandgap reference circuit and a converter based on it
  • A low power consumption full MOS tube bandgap reference circuit and a converter based on it
  • A low power consumption full MOS tube bandgap reference circuit and a converter based on it

Examples

Experimental program
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Effect test

Embodiment 1

[0039] A low-power full MOS tube bandgap reference circuit, including a mirrored NMOS tube, a mirrored PMOS tube that lowers the branch current to make the mirrored NMOS tube work in the sub-threshold region, a second NMOS tube NM2 that converts the current into a voltage, and converts the voltage The fifth NMOS transistor NM5 converted into current and the MOS transistor group that provides bias for the second NMOS transistor NM2 and the fifth NMOS transistor NM5 to work in the linear region;

[0040] The mirrored PMOS transistor, the mirrored NMOS transistor and the fifth NMOS transistor NM5 are connected to generate a current that has nothing to do with the power supply. The current flows into the second NMOS transistor NM2 through the mirrored PMOS transistor and is converted into a voltage. The second NMOS transistor NM2 is connected to the third NMOS transistor in the mirrored NMOS transistor. The NMOS transistor NM3 is connected to realize the superposition of the positi...

Embodiment 2

[0093] Based on Embodiment 1, the specific circuit schematic diagram is connected as follows:

[0094] The mirrored PMOS transistor includes a third PMOS transistor PM3 and a fourth PMOS transistor PM4, the third PMOS transistor PM3 and the fourth PMOS transistor PM4 adopt an inverse ratio transistor, the mirrored NMOS transistor includes a third NMOS transistor NM3 and a fourth NMOS transistor NM4, and the mirrored PMOS transistor The circuit connections of the tube, the mirrored NMOS tube, the second NMOS tube NM2, and the fifth NMOS tube NM5 are as follows:

[0095] The source of the third PMOS transistor PM3 is connected to VDD, its gate is connected to the gate of the fourth PMOS transistor PM4, its drain is connected to the drain of the second NMOS transistor NM2, and the reference voltage V ref ; The source of the second NMOS transistor NM2 is connected to the gate and drain of the third NMOS transistor NM3, and the source of the third NMOS transistor NM3 is connected t...

Embodiment 3

[0102] Based on Embodiment 2, the bandgap reference circuit of the present application can be applied to converters, the details are as follows:

[0103] An analog-to-digital converter, comprising a full MOS tube bandgap reference circuit, the full MOS tube bandgap reference circuit includes a mirrored NMOS tube, a mirrored PMOS tube that lowers the branch current to make the mirrored NMOS tube work in a sub-threshold region, and converts the current The second NMOS transistor NM2 converted into voltage, the fifth NMOS transistor NM5 converted from voltage into current, and the MOS transistor group that provides bias for the second NMOS transistor NM2 and the fifth NMOS transistor NM5 to work in the linear region;

[0104] The mirrored PMOS transistor, the mirrored NMOS transistor and the fifth NMOS transistor NM5 are connected to generate a current that has nothing to do with the power supply. The current flows into the second NMOS transistor NM2 through the mirrored PMOS tran...

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Abstract

The invention discloses a low-power full MOS tube bandgap reference circuit and a converter based on it, and relates to the field of bandgap reference circuits; it includes a mirrored NMOS transistor, a mirrored PMOS transistor, a second NMOS transistor NM2, and a fifth NMOS transistor NM5 and the MOS transistor group that provide bias for NM2 and NM5 to make them work in the linear region; the mirrored PMOS transistor, the mirrored NMOS transistor and the fifth NMOS transistor NM5 are connected to generate a current that has nothing to do with the power supply, and the current flows into the fifth NMOS transistor through the mirrored PMOS transistor. The second NMOS transistor NM2 is converted into a voltage, and the second NMOS transistor NM2 is connected to the third NMOS transistor NM3 in the mirrored NMOS transistor to realize the superposition of the positive temperature coefficient voltage generated by NM2 and the gate-source voltage with a negative temperature coefficient of NM3, and the mirrored PMOS transistor. The drain of the third PMOS transistor PM3 is connected to the drain of the NMOS transistor NM2, and the superimposed zero temperature coefficient voltage is output; the present invention solves the problem of constructing a zero-temperature band gap based on the negative temperature characteristic of the emitter-base voltage of the existing BJT tube. The reference has the problems of large circuit power consumption and complex circuit, and achieves the effect of reducing power consumption and circuit area while achieving zero voltage temperature.

Description

technical field [0001] The invention relates to the field of bandgap reference circuits, in particular to a low-power full MOS tube bandgap reference circuit and a converter based thereon. Background technique [0002] Bandgap reference voltage source is an indispensable part of analog integrated circuits, in linear regulator (LDO), analog / digital converter (ADC), digital / analog converter (DAC), dynamic memory (DRAM), Flash It plays a vital role in the design of integrated circuits such as memories. The traditional bandgap reference voltage source uses the negative temperature characteristics of the emitter-base voltage of the BJT tube to construct a zero-temperature bandgap reference, that is, two bipolar transistors are used to bias them at different current densities, and through two The base-emitter voltage difference of the transistor generates a positive temperature current, and the positive temperature current flows through a certain number of resistors to generate a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/567
Inventor 钟慧张晨彭春瑞王诗元尉旭波石玉
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA