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Preparation method of heterostructure

A heterogeneous structure and substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as fragmentation, stress introduction of bonding structures, etc., to improve stability, reduce overall thermal stress and warpage The effect of music

Active Publication Date: 2019-06-18
SHANGHAI NOVEL SI INTEGRATION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing a heterostructure, which is used to solve the problems of introducing stress into the bonded structure or even fragmentation of the bonded structure caused by heating in the ion beam stripping process of the prior art

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  • Preparation method of heterostructure

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Embodiment 1

[0053] Such as figure 1 As shown, the present invention provides a method for preparing a heterostructure, including the following steps:

[0054] 1) Providing a first substrate, and the first substrate has an ion implantation surface;

[0055] 2) Perform ion implantation on the first substrate from the ion implantation surface to form a defect layer in the first substrate;

[0056] 3) providing a second substrate, and the second substrate has a bonding surface, and bonding the bonding surface and the ion implantation surface to obtain an initial bonding structure; and

[0057] 4) Heat treatment of the initial bonding structure based on local heating to peel off part of the first substrate along the defective layer, so that a part of the first substrate is transferred to the second substrate To form a substrate film on the second substrate to obtain a heterostructure including the second substrate and the substrate film.

[0058] The method for preparing the heterostructure of the pres...

Embodiment 2

[0092] In addition, the present invention also provides a second embodiment. The difference between the second embodiment and the first embodiment is that in step 4), the process of performing the heating treatment includes the step of performing overall heating after performing the local heating. That is, it also includes the step of simultaneously using integral heating to achieve part of the first substrate peeling, that is, using an optimization method combining local heating annealing and overall heating annealing to peel off a portion of the first substrate along the defective layer. , So that a part of the first substrate is transferred to the second substrate to form a substrate film on the second substrate to obtain a substrate including the second substrate and the substrate film Heterogeneous structure, which can take into account issues such as production efficiency and cost. For other steps, please refer to Embodiment 1. In one example, the size of the unheated area...

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Abstract

The invention provides a preparation method of a heterostructure. The preparation method comprises the steps of providing a first substrate with an ion implantation surface; carrying out ion implantation from the ion implantation surface to form a defect layer; providing a second substrate with a bonding surface, and bonding the bonding surface with the ion implantation surface to obtain an initial bonding structure; and carrying out heating treatment on the initial bonding structure on the basis of a local heating mode to strip part of the first substrate along the defect layer to form a substrate film on the second substrate so as to obtain the heterostructure comprising the second substrate and the substrate film. The final heterostructure is prepared on the basis of the local heating mode; a local heating annealing process can reduce a thermal stress in the bonding structure and improve the stability of the heterogeneous bonding structure in the preparation process, so that the overall thermal stress and the warping of the heterogeneous bonding structure in the annealing stripping process are reduced; and the prepared single crystal functional film can be used for preparing high-performance acoustic, optical and electrical devices, various sensor devices and the like.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor material preparation, and particularly relates to a method for preparing a heterostructure. Background technique [0002] Currently, the use of ion beam lift-off technology to prepare heterostructures, such as heterogeneous integrated single crystal thin film substrates, is a very promising technical solution. Compared with the traditional heteroepitaxial technology, the single crystal film prepared by the ion beam lift-off method has better crystal quality. In addition, this method does not require epitaxial matching for bonded heterostructures, such as supporting substrates and functional films. Therefore, almost any desired film can be prepared on any substrate. [0003] However, the biggest problem in ion beam lift-off technology is the need to heat the hetero-bonded structure to peel off, because the hetero-bonding material has a thermal expansion coefficient mismatch, the commonly used annea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/18H01L29/06H01L21/02
Inventor 欧欣黄凯赵晓蒙李文琴鄢有泉李忠旭王曦
Owner SHANGHAI NOVEL SI INTEGRATION TECH CO LTD