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Method for achieving electrical control magnetic reading and writing storage function by nanowire ring structure

A storage function and nanowire technology, which is applied in the field of information storage, can solve problems such as speed limits, and achieve the effects of improving use efficiency, reducing manufacturing costs, and good stability

Active Publication Date: 2019-06-18
NANJING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, PMR technology still suffers from a speed limit problem

Method used

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  • Method for achieving electrical control magnetic reading and writing storage function by nanowire ring structure

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Embodiment Construction

[0030] The present invention will be further explained below in conjunction with the accompanying drawings and specific embodiments.

[0031] like figure 1 As shown, the method of the present invention to realize the function of electrically controlling the magnetic reading and writing storage through the nanowire ring structure passes an appropriate current in the nanowire, so that the magnetic domains in the magnetic film are oriented reversed, thereby realizing the electrical control of the magnetic medium. "In" operation, and vice versa, corresponding erasing can also be achieved; the written magnetic domain bias state can be read by introducing an alternating current into the nanowire and tracking its impedance change, thereby realizing the magnetic read and write function controlled by the electric field ; By eliminating the need to move the read-write head, the electrically-controlled magnetic read-write unit can be stacked in multiple layers in the vertical direction, ...

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Abstract

The invention discloses a method for achieving electrical control magnetic reading and writing storage function by a nanowire ring structure. The method comprises the steps of firstly, defining a required nanowire on a substrate to guide a channel growth pattern by a photoetching and etching technology; sequentially guiding to grow the nanowire at step edge to form the nanometer ring structure ina growth mode guided by metal liquid drop; secondly, evaporating or coating a layer of magnetic thin film material on a sample surface, and only maintaining the magnetic thin film material near to thenanometer ring; thirdly, fabricating electrodes at two ends of the nanowire; and finally, allowing an appropriate current to pass through the nanowire so that an induction magnetic field is generatedin the nanometer ring, magnetic domain in a magnetic thin film is turned over directionally and electrical control writing operation of a magnetic medium is achieved or otherwise corresponding erasure also can be achieved. Since the demand of moving a reading and writing magnetic head is eliminated, multi-layer stack of the electrical control magnetic reading and writing unit in a vertical direction can be achieved, so that high-density 3D storage application is achieved.

Description

technical field [0001] The invention relates to the technical field of information storage, in particular to a method for realizing the function of electrically controlling magnetic read-write storage through a nanowire ring structure. Background technique [0002] In the era of explosive growth of information volume in the 21st century, the importance of information storage technology is gradually highlighted. The growing demand for high storage capacity and access speed, cost-effective storage devices has further promoted the development of storage records. In order to continuously improve the recording density of storage media in the recording industry, new storage and recording technologies are emerging. The technology based on perpendicular magnetic recording has doubled the existing recording density. However, PMR still suffers from a speed limit. Contents of the invention [0003] Purpose of the invention: In view of the above problems, the present invention prop...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/12H01L27/22B82Y10/00B82Y40/00
Inventor 余林蔚朱智旻马海光王军转
Owner NANJING UNIV
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