Total dose effect detecting circuit

Abstract

The invention discloses a total dose effect detecting circuit, which belongs to the technical field of power electronics. The total dose effect detecting circuit comprises a detecting array and an encoder, wherein the detecting array comprises multiple basic detecting units; the basic detecting unit comprises a detecting module; the detecting module performs detection by using an inverter structure with input grounded; the output end of the basic detecting unit is connected to the output end of the detecting module and outputs output signals of the basic detecting unit; the reversal dose pointof output signals of each basic detecting unit is set through setting the size of an MOS transistor forming the inverter in each detecting module; and the input signals of the encoder are output signals of each basic detecting unit and the output signals serve as output signals of the total dose effect detecting circuit. The total dose detecting circuit disclosed by the invention can detect radiation doses of different sizes, has a wide detection range, has the characteristics of simple structure, small layout area and strong universality, is applicable to a common integrated circuit technology, is more flexible in process selection and wider in application scope.

Description

technical field [0001] The invention belongs to the technical field of power electronics and relates to a total dose effect detection circuit. Background technique [0002] In application environments such as aerospace or nuclear experiments, integrated circuits are constantly exposed to radiation. The radiation environment has a large number of different types of high-energy particles and rays, which will cause total dose effects, ionization damage, and single event effects on integrated circuits. These effects can degrade or even invalidate the performance of integrated circuits. For analog integrated circuits, especially power integrated circuits that use larger line widths, the total dose effect is the main reason for their failure. For analog integrated circuits, the total dose effect refers to the fact that semiconductor materials absorb and accumulate radiation doses during irradiation, and these radiation doses will change the charge distribution of semiconductor d...

AI Technical Summary

Problems solved by technology

[0004] Aiming at the design requirements of the total dose effect detection circuit and the complex structure and error problems existing in the existing total dose detection circuit, the present invention proposes a total dose effect detection circuit. The characteristics of this circuit are: 1) It can control the total The dose effect is detected, and the detection range is wide; 2) It can be integrated in a common process; 3) The structure is simple, easy to implement and does not require additional bias structures

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