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Memristor based on two-dimensional MXene material and preparation method of memristor

A memristor device and material film technology, applied in the field of brain-like devices, can solve the problems of limiting the application and development of memristors, poor resistance state stability, large randomness, etc., achieving resistance state stability, low cost, and simple preparation method Effect

Inactive Publication Date: 2019-06-21
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Obviously, the process based on the migration of ions and oxygen vacancies is slower than that based on electron migration, and is affected by thermal effects, resulting in poor resistance stability and high randomness, which limits the application and development of memristors in the field of information storage.

Method used

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  • Memristor based on two-dimensional MXene material and preparation method of memristor
  • Memristor based on two-dimensional MXene material and preparation method of memristor
  • Memristor based on two-dimensional MXene material and preparation method of memristor

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preparation example Construction

[0041] The present invention also provides a method for preparing the above-mentioned memristive device, comprising the following steps:

[0042] S1) Bottom electrode deposition: In a vacuum environment, the substrate is fixed on the target gun of the sputtering system, the bottom electrode material is selected as the sputtering source, and the bottom electrode is deposited by a magnetron sputtering device. The bottom electrode is evenly and completely covered on the substrate. bottom surface;

[0043] S2) Dielectric layer sputtering: maintain the vacuum environment in step S1, replace the dielectric layer sputtering source, and uniformly and completely sputter the dielectric layer on the upper surface of the bottom electrode;

[0044] S3) Preparation of MXene suspension: Mix MXene and deionized water according to the mass ratio of 1:150, stir for 5min-15min to prepare MXene suspension;

[0045] S4) Preparation of the resistive layer: absorb the upper turbid liquid of the MXene...

Embodiment 1

[0049] A kind of structure is the memristive device of copper / MXene / silicon dioxide / tungsten, and its preparation method comprises the following steps:

[0050] S1) In a vacuum environment, fix the silicon substrate on the target gun of the sputtering system, select tungsten as the sputtering source, and deposit a tungsten electrode with a thickness of 90 nm by magnetron sputtering. The tungsten electrode is evenly and completely covered on the silicon the upper surface of the substrate;

[0051] S2) Maintaining the vacuum environment in step S1, replacing the silicon dioxide sputtering source, uniformly and completely sputtering a silicon dioxide dielectric layer with a thickness of 80 nm on the upper surface of the tungsten electrode;

[0052] S3) Mix MXene and deionized water according to the mass ratio of 1:150, and stir for 10 minutes to prepare MXene suspension;

[0053] S4) Absorb the upper turbid liquid of the MXene suspension in step S3, drop it on the silica medium ...

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Abstract

The invention provides a memristor based on a two-dimensional MXene material and a preparation method of the memristor. The memristor comprises top electrodes, a resistive layer and a bottom electrodewhich are sequentially arranged from top to bottom; the resistive layer, the bottom electrode and a substrate are matched in shape and size; the resistive layer comprises a dielectric layer and a MXene material film laid above the dielectric layer; the top electrodes are symmetrically arranged at the two ends of the top of the MXene material film; and the top and the bottom of the bottom electrode are in contact connection with the dielectric layer and the substrate respectively. The memristor is good in conductivity and stability and more stable in resistance state, can be used for multi-value storage, and has a wide application prospect; and in addition, the preparation method of the memristor is simple and convenient, efficient and low in cost, and can be widely applied to the industrial production.

Description

technical field [0001] The invention relates to a memristive device and a preparation method thereof, in particular to a memristive device based on a two-dimensional MXene material and a preparation method thereof, belonging to the technical field of brain-like devices. Background technique [0002] Memristor is a two-port nonlinear passive electronic device based on the resistance transition effect, which can memorize the amount of charge flowing through it. Oxide semiconductors) are compatible with the composition of hybrid hybrid units and have strong scalability and 3D stacking capabilities. Memristors also have characteristics very similar to synapses. Therefore, in the next generation of non-volatile memories and neural networks It has a great application prospect. Non-volatile memory has the characteristics of fast erasing and writing speed, low power consumption and multi-valued storage, and can use cross-array structure to realize high-density storage. [0003] Th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 沈心怡刘鑫伟高斐张缪城童祎连晓娟万相
Owner NANJING UNIV OF POSTS & TELECOMM