A marking processing method, a measuring method for overlay accuracy and marking
A technology of overlay accuracy and processing method, applied in the field of photolithography, can solve the problems of inability to complete the overlay measurement of the front layer, difficulty in overlay measurement, and difficulty in observing the overlay mark of the front layer, so as to reduce the waste of devices. The effect of risk, clear boundary and easy identification
Active Publication Date: 2021-02-26
YANGTZE MEMORY TECH CO LTD
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However, as the thickness and density of the material increase, the absorption of light by these HM layers gradually increases, while the reflection decreases, which will have a great impact on the photolithography process, especially making the overlay measurement after the photolithography process difficult. Increase, even due to the absorption of light by the HM layer, the overlay marks on the front layer are difficult to observe, and the overlay measurement of the current layer to the front layer cannot be completed
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[0032] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the specific embodiments set forth herein. On the contrary, these embodiments are provided for a more thorough understanding of the present invention and to fully convey the scope of the disclosure of the present invention to those skilled in the art.
[0033] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are no...
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The invention discloses a marking processing method, an overlay precision measuring method, a three-dimensional storage preparation method, a marking and a three-dimensional storage. The marking processing method comprises the following steps: providing a base structure, and performing the first photolithography process, forming a first mark on the upper surface of the base structure, having a top layer structure layer surrounding the first mark on the upper surface of the base structure; removing a certain thickness downward from the upper surface of the base structure The top structural layer, so that the first mark has a first height difference from the top structural layer.
Description
technical field [0001] The invention relates to the technical field of photolithography technology, in particular to a mark processing method, an overlay accuracy measurement method, a three-dimensional memory preparation method, a mark and a three-dimensional memory. Background technique [0002] The lithography process is a key step in the manufacture of semiconductor integrated circuits, and the overlay accuracy (OVL accuracy) of lithography is one of the key parameters to measure the lithography process. Overlay accuracy specifically refers to the offset between the upper and lower layers of the wafer, that is, the overlay error. In the field, the overlay error is usually measured by measuring the offset between the upper and lower layers of overlay marks (OVLmark), so as to evaluate the overlay accuracy. [0003] In the process of three-dimensional NAND memory, in order to meet the requirements of high etching aspect ratio and high etching selectivity, it is usually ne...
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IPC IPC(8): G03F7/20G03F9/00
Inventor 郭芳芳万浩陆聪李伟高志虎冯耀斌卢绍祥
Owner YANGTZE MEMORY TECH CO LTD