Two-dimensional-arrangement double-sided staggered embedded type three-dimensional detector and preparation method and array thereof

Abstract

The invention discloses a two-dimensional-arrangement double-sided staggered embedded type three-dimensional detector and a preparation method and array thereof. The detector comprises an upper trenchelectrode and a lower trench electrode, wherein the upper trench electrode and the lower trench electrode are etched on the surface of an intermediate semiconductor substrate; an upper central electrode is embedded in the upper groove electrode, and an upper semiconductor substrate is filled between the upper central electrode and the upper groove electrode; a lower central electrode is embeddedin the lower groove electrode, and a lower semiconductor substrate is filled between the lower groove electrode and the lower central electrode; the outer widths of the upper trench electrode and thelower trench electrode are 2RX; the lower trench electrode is located below the upper trench electrode, and the vertical distance d3 is formed between the upper trench electrode and the lower trench electrode; 1 / 4 of parts of the upper trench electrode and the lower trench electrode are overlapped, and the upper central electrode and the lower central electrode are of the same specification. A silicon dioxide layer is generated on the surface of a chip through gettering oxidation, a detector pattern is transferred to the silicon dioxide layer through marking and photoetching, etching and chemical deposition diffusion of a cathode electrode and an anode electrode are carried out, and finally damage repair and packaging are carried out.

Description

technical field [0001] The invention belongs to the technical field of photons (including X-rays, lasers, and X-ray free electron lasers) or particle detection, and relates to a two-dimensionally arranged double-sided staggered-embedded three-dimensional detector, a preparation method and an array thereof. Background technique [0002] The three-dimensional trench electrode silicon detector is to etch a certain depth of trench electrodes and central electrodes on one side of the chip. If the trench electrodes are etched through the chip to form a loop, the detector will fall between the chips. outside. Therefore, the groove electrode and the central electrode with a certain depth (less than the chip depth) are etched on one side of the chip, and the bottom not surrounded by the groove electrode is a dead zone, and the depth of the bottom dead zone is the same as that of the groove electrode etched on one side. The sum of the etching depths is the total depth of the chip. T...

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a two-dimensional arrangement double-sided interlaced three-dimensional detector and its preparation method and array, which solves the problem of low sensitivity of the existing three-dimensional groove electrode detector and the large number of electronic read-out channels resulting in complicated electronics. , easy to be broken down and low position resolution

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