Nano-column array heterojunction and preparation method thereof

A nanocolumn array and heterojunction technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of lack of one-dimensional nanocolumn array heterojunction nanocolumn array heterojunction, and achieve experimental methods The effect of simplicity, less gaps, and obvious array structure

Active Publication Date: 2019-06-28
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The invention provides a nanocolumn array heterojunction and its preparation method, which solves the technical defects of the lack of one-dimensional nanocolumn array heterojunction and the preparation of nanocolumn array heterojunction by vacuum thermal evaporation technology in the prior art

Method used

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  • Nano-column array heterojunction and preparation method thereof
  • Nano-column array heterojunction and preparation method thereof
  • Nano-column array heterojunction and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0029] Weigh Bi respectively 2 Te 3 with Sb 2 Te 3 The powder with a molar ratio of 1:1 was placed in two different evaporation sources of a multi-source high vacuum thermal evaporation coating machine, the substrate was made of quartz glass, and the distance between the two evaporation sources and the substrate was adjusted to be 5cm. First stage, vacuum down to 9×10 -5 Pa, increase substrate temperature to 250°C, then increase Bi 2 Te 3 Evaporation source temperature to 520°C, vapor deposition for 20min; the second stage, close the Bi 2 Te 3 Evaporation source, open Sb 2 Te 3 Evaporate the source and heat up to 550°C, adjust the pressure to 7×10 - 5 Pa, vapor deposition for 20min. After evaporation, the temperature was lowered and the product was collected.

[0030] Scanning electron microscopy was performed on the heterojunction of the nanopillar array prepared in Example 1 of the present invention. like figure 1 and figure 2 as shown, figure 1 It is a surf...

Embodiment 2

[0033] Weigh Bi respectively 2 Te 3 with Sb 2 Te 3 The powder with a molar ratio of 1:1 was placed in two different evaporation sources of a multi-source high vacuum thermal evaporation coating machine, the substrate was made of quartz glass, and the distance between the two evaporation sources and the substrate was adjusted to be 5cm. First stage, vacuum down to 9×10 -5 Pa, increase substrate temperature to 250°C, then increase Bi 2 Te 3Evaporation source temperature to 530°C, evaporation for 15min; the second stage, close the Bi 2 Te 3 Evaporation source, open Sb 2 Te 3 Evaporate the source and heat up to 550°C, adjust the pressure to 7×10 - 5 Pa, vapor deposition for 15min. After evaporation, the temperature was lowered and the product was collected.

Embodiment 3

[0035] Weigh Bi respectively 2 Te 3 with Sb 2 Te 3 The powder with a molar ratio of 1:1 was placed in two different evaporation sources of a multi-source high vacuum thermal evaporation coating machine, the substrate was made of quartz glass, and the distance between the two evaporation sources and the substrate was adjusted to be 5cm. First stage, vacuum down to 9×10 -5 Pa, increase substrate temperature to 230°C, then increase Bi 2 Te 3 Evaporation source temperature to 500°C, evaporation for 20min; the second stage, close the Bi 2 Te 3 Evaporation source, open Sb 2 Te 3 Evaporate the source and heat up to 530°C, adjust the pressure to 7×10 - 5 Pa, vapor deposition for 20min. After evaporation, the temperature was lowered and the product was collected.

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Abstract

The present invention relates to the technical field of nanostructures and particularly relates to a nano-column array heterojunction and a preparation method thereof. The invention provides a preparation method of the nano-column array heterojunction, the method comprises the steps of opening a Bi2Te3 evaporation source to evaporate Bi2Te3 on a substrate, then turning off the Bi2Te3 evaporation source, opening a Sb2Te3 evaporation source to perform vacuum evaporation, and collecting a product on the substrate. The invention provides the nano-column array heterojunction and the preparation method thereof, the technical defect that the prior art lacks a one-dimensional nano-column array heterojunction and the vacuum thermal evaporation technology for preparing the nano-column array heterojunction is solved.

Description

technical field [0001] The invention relates to the technical field of nanostructures, in particular to a nanocolumn array heterojunction and a preparation method thereof. Background technique [0002] Group V-VI compounds are in the form of A 2 B 3 Due to their excellent thermoelectric properties, the materials are widely used in thermoelectric power generation, thermoelectric refrigeration and other fields. Among them, the telluride series materials have excellent properties. At present, more researches at home and abroad are Bi 2 Te 3 base composite material. [0003] Bi 2 Te 3 It is a narrow bandgap semiconductor material, which belongs to the trigonal crystal system. Its crystal has a layered structure and has good electrical conductivity. Because this material has excellent thermoelectric properties near room temperature, it is widely used for refrigeration and power generation near room temperature. It is a room temperature thermoelectric material system widely...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
Inventor 简基康杨文龙吴晶杜炳生
Owner GUANGDONG UNIV OF TECH
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