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Solar cell provided with amorphous silicon passivation layer and manufacturing method of solar cell

A technology for solar cells and amorphous silicon layers, applied in the field of solar cells, can solve problems such as poor surface passivation effect and poor cell conversion efficiency, and achieve the effect of reducing losses

Pending Publication Date: 2019-06-28
TONGWEI SOLAR ENERGY CHENGDU CO LID
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a solar cell using an amorphous silicon passivation layer and a manufacturing method thereof in order to solve the problem that the conversion efficiency of the cell is not good due to the poor surface passivation effect of the solar cell in the prior art , using the good field effect passivation effect and chemical passivation effect of the hydrogenated doped amorphous silicon layer, can achieve a good surface passivation effect and improve battery efficiency

Method used

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  • Solar cell provided with amorphous silicon passivation layer and manufacturing method of solar cell
  • Solar cell provided with amorphous silicon passivation layer and manufacturing method of solar cell

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Embodiment 1

[0038]A solar cell using an amorphous silicon passivation layer, comprising a base layer 1, an amorphous silicon layer 2 arranged on the upper and lower sides of the base layer 1, a transparent conductive oxide layer 3 arranged on the outer surface of the amorphous silicon layer 2, and a The metal electrode 4 on the outer surface of the transparent conductive oxide layer 3; the base layer 1 is a P-type single crystal silicon wafer, and the amorphous silicon layer 2 includes the first N-type silicon wafers arranged in sequence along the upper and lower surfaces of the P-type single crystal silicon wafer. A doped layer 5, a first P-type doped layer 6, the first N-type doped layer 5 includes an N+-a-Si doped layer 7 and an N-c-Si doped layer 8 arranged in sequence from top to bottom, The first P-type doped layer 6 is a P+-a-Si doped layer; a P-type doped and N-type doped amorphous silicon layer is used as a passivation coating to form an N+-a- The step change structure of Si / N-c-...

Embodiment 2

[0040] On the basis of Example 1, the base layer 1 is an N-type monocrystalline silicon wafer, and the amorphous silicon layer 2 includes a second P-type doped layer 10 arranged sequentially along the upper and lower surfaces of the N-type monocrystalline silicon wafer, The second N-type doped layer 11, the second P-type doped layer 10 includes a P+-a-Si doped layer and a P-c-Si doped layer arranged in sequence from top to bottom, and the second N-type doped layer The impurity layer is N+-a-Si doped layer.

Embodiment 3

[0042] On the basis of embodiment 2, both the N+-a-Si doped layer and the P+-a-Si doped layer are hydrogenation-doped amorphous silicon layers.

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Abstract

The invention discloses a solar cell provided with an amorphous silicon passivation layer and a manufacturing method of the solar cell. The invention belongs to the field of solar cells, and particularly relates to a solar cell with a special passivation layer. According to the technical scheme of the invention, the solar cell comprises a substrate layer, an amorphous silicon layer arranged on theupper side and the lower side of the substrate layer, a transparent conductive oxide layer arranged on the amorphous silicon layer, and a metal electrode arranged on the outer surface of the transparent conductive oxide layer. The substrate layer is a P-type monocrystalline silicon wafer. The amorphous silicon layer comprises a first N-type doping layer and a first P-type doping layer which are sequentially arranged along the upper surface layer and the lower surface layer of the P-type monocrystalline silicon wafer. The first N-type doping layer comprises an N+-a-Si doping layer and an N-c-Si doping layer, wherein the N+-a-Si doping layer and the N-c-Si doping layer are sequentially arranged from top to bottom. The first P-type doping layer comprises a P+-a-Si doping layer. According tothe solar cell provided with the amorphous silicon passivation layer and the manufacturing method of the solar cell, the good field effect passivation effect and the good chemical passivation effect of a hydrogenated and doped amorphous silicon layer are utilized, so that the good surface passivation effect can be achieved. The cell efficiency is improved.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a solar cell using an amorphous silicon passivation layer and a manufacturing method thereof. Background technique [0002] The efficiency of traditional crystalline silicon solar cells has risen rapidly in recent years, and the market's demand and expectations for high-efficiency cells have become higher and higher. Various new technologies and new structures have been adopted in the recent production of high-efficiency cells, such as heterojunction structures (HIT ) and tunnel oxide passivation contact (TOPCon) structures, etc. [0003] The surface recombination of minority carriers accounts for a large proportion of the efficiency loss of solar cells, and the surface passivation of solar cells is very important in various new high-efficiency solar cells. Generally, passivation methods are generally divided into two types according to their working principles: chemical p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/068H01L31/0216H01L31/18
CPCY02E10/547Y02P70/50
Inventor 王涛洪布双张鹏
Owner TONGWEI SOLAR ENERGY CHENGDU CO LID
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