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SiC SINGLE CRYSTAL COMPOSITE AND SiC INGOT

A composite, single crystal technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of different polytypes, SiC ingot quality deterioration, cracking and other problems

Active Publication Date: 2019-06-28
RESONAC CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, if the single crystal grown from the seed crystal contacts the polycrystal grown on the guide member, it will cause defects, polymorphism, cracking, etc., and deteriorate the quality of the SiC ingot.

Method used

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  • SiC SINGLE CRYSTAL COMPOSITE AND SiC INGOT
  • SiC SINGLE CRYSTAL COMPOSITE AND SiC INGOT
  • SiC SINGLE CRYSTAL COMPOSITE AND SiC INGOT

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Embodiment Construction

[0030] Hereinafter, the SiC single crystal composite and the SiC ingot to which the present invention is applied will be described in detail with appropriate reference to the drawings. For the sake of convenience, the drawings used in the following description may show enlarged characteristic parts, and the dimensional ratio of each component may be different from actual ones. Materials, dimensions, and the like illustrated in the following description are examples, and the present invention is not limited thereto, and can be appropriately changed and implemented within a range that does not change the gist.

[0031] figure 1 is a schematic diagram of a SiC single crystal composite 10 according to one aspect of the present invention. figure 1 (a) is a cross-sectional schematic diagram, figure 1 (b) is a schematic plan view.

[0032] Such as figure 1 As shown, the SiC single crystal composite 10 includes a central portion 1 located at the center in plan view and an outer pe...

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Abstract

This SiC single crystal composite is provided with: a central part positioned on the center when viewed in a plane; and a peripheral part surrounding the periphery of the central part. The central part and the peripheral part have crystal planes, which are inclined or different. A boundary is present between central part and the peripheral part, and makes the direction of crystals constituting thecentral part differ from the direction of crystals constituting the peripheral part.

Description

technical field [0001] The present invention relates to a SiC single crystal composite and a SiC ingot. [0002] This application claims priority based on Patent Application No. 2016-222273 for which it applied in Japan on November 15, 2016, and uses the content here. Background technique [0003] Compared with silicon (Si), silicon carbide (SiC) has one bit larger insulation breakdown electric field and three times larger band gap. In addition, silicon carbide (SiC) has characteristics such as thermal conductivity about three times higher than that of silicon (Si). Looking forward to the application of silicon carbide (SiC) in power devices, high-frequency devices, high-temperature operating devices, etc. [0004] SiC wafers are produced by cutting out SiC ingots. In recent years, the diameter of SiC wafers on which SiC epitaxial films are grown has been required to be increased in accordance with market demands. Therefore, the demand for increasing the diameter and len...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/06
CPCC30B29/36C01B32/956C30B23/025C30B23/02
Inventor 藤川阳平上东秀幸
Owner RESONAC CORPORATION