Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor structure and method of forming the same

A semiconductor and conductive structure technology, applied in the field of semiconductor structure and its formation, can solve the problems of poor performance of vertical nanowire transistors and achieve high integration

Active Publication Date: 2022-07-19
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the performance of existing vertical nanowire transistors is poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure and method of forming the same
  • Semiconductor structure and method of forming the same
  • Semiconductor structure and method of forming the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The prior art semiconductor structures have many problems, for example, the semiconductor structures have poor performance and low integration.

[0033] Now combined with a semiconductor structure, the reasons for the low integration of the existing semiconductor structure are analyzed:

[0034] Due to the large substrate surface occupied by conventional planar transistors, the integration of the semiconductor structure is low. In order to improve the integration of the formed semiconductor structure, a vertical nanowire transistor is proposed.

[0035] figure 1 and figure 2 It is a schematic structural diagram of each step of a method for forming a vertical nanowire transistor.

[0036] Please refer to figure 1 , a substrate 130 is provided, the surface of the substrate 130 has a fin pillar 131, the fin pillar 131 includes a bottom region I, a channel region II on the bottom region I, and a top portion on the channel region II Zone III.

[0037] continue to refe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
heightaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A semiconductor structure and a method for forming the same, wherein the forming method includes: forming a sidewall covering a channel region of a fin pillar and a sidewall of a top region; using the sidewall as a mask, forming on the surface of the sidewall of the bottom region a first conductive structure; after the first conductive structure is formed, the spacer is removed; after the spacer is removed, a gate structure is formed on top of the first conductive structure, and the gate structure is located in the fin pillar trench the surface of the channel region; after the gate structure is formed, a second conductive structure is formed on the top of the gate structure, and the second conductive structure is located on the surface of the top region of the fin column. The forming method can improve the integration degree of the formed semiconductor structure.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular, to a semiconductor structure and a method for forming the same. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher component density and higher integration. With the improvement of component density and integration level of semiconductor devices, the size of transistors is also getting smaller and smaller, and the reduction of transistor size makes the short-channel effect more and more significant. [0003] In order to reduce the short-channel effect, fin field effect transistors are operated. The gate of the fin field effect transistor is a fork-like 3D structure similar to a fish fin. The gate of the fin field effect transistor can be turned on and off in the multi-side control circuit of the fin, so that the short channel effect of the transisto...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L21/336
CPCH01L29/785H01L21/823431H01L29/66795
Inventor 李勇洪中山
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com