Monolithic integration type MEMS gas sensor

A gas sensor and monolithic integration technology, applied in the direction of semiconductor/solid-state device parts, instruments, scientific instruments, etc., can solve the problems of narrow sensing range, increased use cost, waste, etc., and achieve the effect of reducing production cost and use cost

Inactive Publication Date: 2019-07-09
YANTAI BOHAO INFORMATION TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the gas sensor is specially made for the sensing gas in the production process. Each se

Method used

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  • Monolithic integration type MEMS gas sensor
  • Monolithic integration type MEMS gas sensor

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[0014] The principles and features of the present invention will be described below with reference to the accompanying drawings. The examples cited are only used to explain the present invention, and are not used to limit the scope of the present invention.

[0015] A monolithic integrated MEMS gas sensor, comprising a substrate 1, a silicon carbide layer 2 located on the substrate 1, the upper surface of the silicon carbide layer 2 is coated with a silicon dioxide film 3, the silicon dioxide film 3 An insulating layer 4 is provided on the surface, a gas sensitive layer 5 is provided on the upper surface of the insulating layer 4, a heating electrode 6 is provided between the gas sensitive layer 5 and the insulating layer 4, and the gas sensitive layer 5 is two Above, a heat sensitive layer 7 is provided between the gas sensitive layer 5 and the heating electrode 6, the substrate 1, the silicon carbide layer 2, the silicon dioxide film 3, the insulating layer 4, the heating electr...

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Abstract

The invention relates to a monolithic integration type MEMS gas sensor. By integrating a plurality of gas sensors on a substrate, various gases can be detected simultaneously or at different times according to requirements, thereby effectively reducing the production cost and the use cost. The monolithic integration type MEMS gas sensor comprises a substrate and a silicon carbide layer on the substrate, an upper surface of the silicon carbide layer is coated with a silicon dioxide film, the upper surface of the silicon oxide film is provided with an insulating layer, the upper surface of the insulating layer is provided with gas sensitive layers, a heating electrode is disposed between the gas sensitive layers and the insulating layer, two or more gas sensitive layers are disposed, a thermosensitive layer is disposed between the gas sensitive layers and the heating electrode, the substrate, the silicon carbide layer, the silicon dioxide film, the insulating layer, the heating electrode, the thermosensitive layer and the gas sensitive layers are respectively connected by bonding layers, the upper surface of the gas sensitive layer is coated with a gas sensitive metal oxide film, andthe gas sensitive metal oxide film on each gas sensitive layer is made of different or the same material.

Description

technical field [0001] The invention relates to a MEMS gas sensor, in particular to a monolithically integrated MEMS gas sensor. Background technique [0002] Micro-Electro-Mechanical Systems (MEMS) gas sensors are sensor devices based on MEMS technology and semiconductor gas sensing principles. Used to detect various gases such as hydrogen, nitrogen, methane, carbon monoxide, alcohol or volatile organic compounds (VOC), etc. It can be mass-produced, has the characteristics of small size and low power consumption, and is widely used in the fields of industry, home furnishing, environmental detection and consumer electronics. [0003] At present, the gas sensor is specially made for the sensing gas in the production process. Each sensor can only sense one or several gases, and the sensing range is narrow. cost, resulting in unnecessary waste. Contents of the invention [0004] The invention aims at the deficiencies in the prior art, and provides a single-chip integrated ...

Claims

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Application Information

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IPC IPC(8): G01N27/00B81B7/02
CPCB81B7/02G01N27/00
Inventor 孙书敏
Owner YANTAI BOHAO INFORMATION TECH CO LTD
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